Two-dimensional tungsten disulfide (WS<sub>2</sub>), as a semiconductor material with layer-dependent electronic and optoelectronic properties, has garnered significant attention for its application prospects in the field of optoelectronic devices. Currently, the production of wafer-scale monolayer WS<sub>2</sub> films stands as a pivotal challenge that must be overcome to harness its potential in advanced transistors and integrated circuits. Chemical vapor deposition (CVD) has emerged as a viable technique for fabricating large-scale, high-quality monolayer WS<sub>2</sub> films, yet the intricate and subtle growth process often results in low efficiency and variable quality. To steer experimental endeavors toward minimizing grain boundaries in WS<sub>2</sub> and augmenting film quality for enhanced electronic performance and mechanical stability, this study investigates the nucleation mechanisms of the CVD growth of WS<sub>2</sub> based on first-principles theoretical calculations. By incorporating the chemical potential as a key variable, we have analyzed the growth energy curves of WS<sub>2</sub> under diverse experimental conditions. Our findings demonstrate that modulating the temperature or pressure of tungsten and sulfur precursors can decisively influence the nucleation rate of WS<sub>2</sub>. Specifically, the nucleation rate peaks at a tungsten source temperature of 1250 K, while an increase in sulfur source temperature or a decrease in pressure can suppress the nucleation rate, thereby enhancing the crystallinity and uniformity of the monolayer WS<sub>2</sub>. These insights not only furnish a robust theoretical foundation for experimentally fine-tuning the nucleation rate as needed but also provide strategic guidance for optimizing experimental parameters to refine the crystallinity and uniformity of monolayer WS<sub>2</sub> films. Such advancements are anticipated to accelerate the deployment of WS<sub>2</sub> materials in a spectrum of high-performance electronic devices, marking a significant stride in material science and industrial applications.