Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

Corr, Cormac; Boswell, Roderick; Carman, Robert J.

doi:10.1088/0022-3727/44/4/045201

Cited by 21 publications

(16 citation statements)

References 21 publications

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“…This means that the first excited metastable nitrogen molecule state (N 2 *(A 3 Σ u + )) with 6.2 eV above the ground state (N 2 (X 1 Σ g + )) would already allow this reaction. This state has a long radiative decay time (2.4–3.3 s) and is difficult to detect due to its low intensity level 10.…”

Section: Resultsmentioning

confidence: 99%

“…Thus, there are no fast electrons which could excite nitrogen and no N 2 * emission could be detected. Nevertheless, there could be enough electrons to excite active nitrogen in the metastable state N 2 *(A 3 Σ u + ), with energy just slightly above Ga ionization level 6 eV 10, and therefore at relatively large densities. Further measurements and analysis are necessary.…”

Section: Resultsmentioning

confidence: 99%

“…Its novelty lies in microwave plasma formation in the growth zone (in the mm range from the seed) at high pressure (200–800 mbar range) and concurrent physical vapour transport of Ga. Thus, in contrast to GaN growth by means of remote nitrogen plasma 10, a special high‐temperature microwave setup has been built and implemented in the GaN growth region itself 11.…”

Section: Introductionmentioning

confidence: 99%

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Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Zwierz

Golka

Kachel

et al. 2013

Cryst. Res. Technol.

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We present an alternative approach to grow thick GaN single crystalline layers from Ga vapour, transported by an N 2 carrier gas flow, and from nitrogen, excited very near the substrate by 2.45 GHz microwaves at pressure in the 200-800 mbar range. Crystal growth requires high stability of process parameters, especially of plasma operation. A major challenge arose from temperature dependent changes in cavity resonance. Optical emission spectroscopy (OES) was used for plasma characterization while the grown layers were characterized by scanning electron microscopy (SEM) and X-ray diffraction (XRD).

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Zwierz

Golka

Kachel

et al. 2013

Cryst. Res. Technol.

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“…It is believed that the crystalline quality could be further promoted after introducing 2D materials on the surface of flexible substrates, which can be called LT‐vdWE. In addition to ALD, numerous original methods have come up in recent years, such as remote plasma chemical vapor deposition (RPCVD), plasma based migration enhanced afterglow chemical vapor deposition (MEAglow), electron cyclotron resonance plasma‐enhanced metal organic chemical vapor deposition (ECR‐PEMOCVD), radical‐enhanced metalorganic chemical vapor deposition (REMOCVD), ion‐filtered inductively coupled‐plasma metal organic chemical vapor deposition (IF‐ICP‐MOCVD), pulsed sputtering deposition (PSD), etc. The common characteristic of these different methods is the cracking of the precursors and reactant by introducing external physical fields.…”

Section: Concluding Remarks and Outlookmentioning

confidence: 99%

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Wang

Hao

et al. 2019

Advanced Materials

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to 6.2 eV for AlN, [3] which spans the entire ultraviolet and visible band [4][5][6][7] as well as the near-infrared region. [8,9] Accordingly, III-nitrides have been widely adopted for the fabrication of light-emitting diodes (LEDs), [10][11][12] laser diodes (LDs), [13][14][15] photodetectors (PDs), [16][17][18] and solar cells. [19][20][21] Furthermore, the spontaneous and piezoelectric polarization in wurtzite semiconductors [22][23][24][25] and the high electron drift velocities [26][27][28] can be used to fabricate high electron mobility transistors based on two-dimensional (2D) electron gas (2DEG) in AlGaN/GaN heterostructures. [29][30][31][32] At present, by employing metal organic chemical vapor deposition (MOCVD), [3,[33][34][35] molecular beam epitaxy (MBE), [36][37][38][39] or hydride vapor phase epitaxy (HVPE), [40][41][42] III-nitride films with high crystalline quality can be obtained on c-plane sapphire, [43][44][45] Si (111), [38,[46][47][48] or 6H-SiC [49][50][51] substrates at a high growth temperature, usually above 1000 °C. [52][53][54] However, exfoliating III-nitride films from such single-crystalline substrates proves difficult because of the strong sp 3 -type covalent bonds between the substrates and epilayers. [55] To overcome this problem, thermal release through laser radiation, [56,57] stamp-based printing, [58,59] chemical etching, [60][61][62][63][64][65][66][67] and mechanical exfoliation [54,55,68,69] from singlecrystalline substrates have been investigated. However, there still remain some bottlenecks for future applications, such as damage, limited size, and tedious steps of the flexible production process. [55] Furthermore, flexible amorphous substrates generally cannot tolerate such high growth temperature, [54] and cannot be used for epitaxial growth of single-crystalline films because of the unordered surface atomic arrangement. [70,71] Hence, it is extremely difficult to make allowance for wearable and foldable applications of next-generation (opto)electronic devices based on III-nitrides. [72] On the other hand, sp 2 -bonded 2D materials (e.g., graphene, hexagonal boron nitride, and transition metal dichalcogenides) exhibit hexagonal in-plane lattice arrangements and weakly bonded layers. [54,73,74] If sp 3 -bonded III-nitride films can somehow be grown on sp 2 -bonded 2D materials, it is theoretically possible to transfer these functional films onto foreign flexible substrates because of the weak van der Waals interactions on both sides of the 2D materials. [68,75,76] In this case, the 2D materials not only act as a buffer layer but also provide a release layer for the mechanical exfoliation of solid-state lighting, flat-panel displays, and solar energy and power electronics. Generally, GaN-based devices are heteroepitaxially grown on c-plane sapphire, Si (111), or 6H-SiC substrates. However, it is very difficult to release the GaN-based films from such single-crystalline substrates and transfer them onto other foreign substrates. Consequently, it is difficult to meet t...

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“…At low temperatures, NH 3 does not readily decompose to the active nitrogen species required for the growth reaction. In the mid 2000s, Blu-glass Inc. reported a remote nitrogen plasma technique for supplying active nitrogen, [ 73,74 ] and reported high-quality GaN grown at 600 °C. [ 33 ] Copyright 2013, American Chemical Society.…”

Section: Low-temperature Growth Of Gan On Glassmentioning

confidence: 99%

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

Choi

Kim

Liu

et al. 2015

Advanced Optical Materials

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There have been significant recent developments in the growth of single‐crystal gallium nitride (GaN) on unconventional templates for large‐area blue or green light‐emitting diodes (LEDs) which, together with layer transfer onto foreign substrates, can enable flexible and stretchable lighting applications. Here, the heteroepitaxial growth of GaN on amorphous and single‐crystal substrates employing various interlayers and nucleation layers is reviewed, as well as the use of weak interfaces for layer‐transfer onto foreign substrates. Recent progress in low‐temperature GaN‐based red–green–blue (RGB) LEDs on glass substrates, which has exhibited a calculated efficiency of 11% compared with that from commertial LEDs, is discussed. Layer‐transfer techniques with various interlayers are also discussed. These heteroepitaxial GaN growth and layer‐transfer technologies are expected to lead to new lighting and display devices with high efficiency and full‐color tunability, which are suitable for large‐area, stretchable display and lighting applications.

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Gas phase optical emission spectroscopy during remote plasma chemical vapour deposition of GaN and relation to the growth dynamics

Cited by 21 publications

References 21 publications

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Plasma enhanced growth of GaN single crystalline layers from Ga vapour

Van der Waals Epitaxy of III‐Nitride Semiconductors Based on 2D Materials for Flexible Applications

Heteroepitaxial Growth of GaN on Unconventional Templates and Layer‐Transfer Techniques for Large‐Area, Flexible/Stretchable Light‐Emitting Diodes

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