2010
DOI: 10.1002/cphc.200900490
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Gas‐Phase Kinetics of Chlorosilylene Reactions II. ClSiH + C2H4: Absolute Rate Measurements and Quantum Chemical and RRKM Calculations for the Prototype π Addition Reaction

Abstract: Time-resolved studies of chlorosilylene, ClSiH, generated by the 193 nm laser flash photolysis of 1-chloro-1-silacyclopent-3-ene, are carried out to obtain rate constants for its bimolecular reaction with ethene, C(2)H(4), in the gas-phase. The reaction is studied over the pressure range 0.13-13.3 kPa (with added SF(6)) at five temperatures in the range 296-562 K. The second order rate constants, obtained by extrapolation to the high pressure limits at each temperature, fitted the Arrhenius equation: log(k(inf… Show more

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Cited by 3 publications
(1 citation statement)
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“…For ClSiH + C 2 H 4 , a p-complex has also been found, 56 but its existence is tenuous because it has almost no barrier to collapse to 1-chlorosilylene. Whether or not p-complexes are involved in these addition reactions it seems that their rate constants are less affected by substituents than insertion reactions.…”
Section: (I) Si-h and Ge-h Insertion Reactionsmentioning
confidence: 99%
“…For ClSiH + C 2 H 4 , a p-complex has also been found, 56 but its existence is tenuous because it has almost no barrier to collapse to 1-chlorosilylene. Whether or not p-complexes are involved in these addition reactions it seems that their rate constants are less affected by substituents than insertion reactions.…”
Section: (I) Si-h and Ge-h Insertion Reactionsmentioning
confidence: 99%