Gas Cluster Ion Beam Processing of GaSb and InSb Surfaces

Krishnaswami, Kannan; Vangala, Shivashankar; Krejca, Brian D.; Allen, L.P.; Santeufemio, C.; Dauplaise, H.M.; Liu, X.; Whitten, James E.; Ospina, M.; Sung, Changmo; Bliss, D.; Goodhue, W. D.

doi:10.1557/proc-792-r10.7

Cited by 2 publications

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References 6 publications

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“…4,5,6 After successful oxide desorbtion, GaSb/AlGaSb heteroepitaxial layers were grown at a substrate temperature of ~500ºC for a total thickness of ~1 µm. Surface topographies, with scan resolutions of 10 x 10, 1 x 1, and 0.1 x 0.1 µm 2 , were acquired using a Digital Nanoscope AFM providing the rms roughness (R rms ) and maximum peak-to-valley range (∆Z).…”

Section: Methodsmentioning

confidence: 99%

Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

et al. 2004

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High-quality GaSb substrates with minimal surface roughness and thin, uniform oxide layers are critical for developing low-power, epitaxy-based, electronic and optoelectronic devices. Ion-beam processing techniques of gas-cluster ion beam (GCIB) and bromine ion-beam assisted etching (Br-IBAE) were investigated as to their potential for improving the suitability of substrate surfaces for molecular beam epitaxial (MBE) growth. Statistical analysis of the residual surface roughness provides insight into ion-beam processing and its impact on epitaxial growth. Images of episurfaces grown on chemical mechanical polished (CMP), Br-IBAE, and GCIB finished substrates were obtained using atomic force microscopy (AFM) and these were statistically analyzed to characterize their surface roughness properties. Autocorrelation analysis of the first two types of episurfaces showed a quick loss of correlation within ~100 nm. The episurface with Br-IBAE also showed isotropic mound roughness with sharp point-like protrusions. The GCIB prepared episurfaces exhibited the formation of uniform step-terrace patterns with monatomic steps and wide terraces as indicated by the strong, long range (>0.5 µm) correlations. Statistical analysis of the GCIB episurfaces showed self-similar random fractal behavior over eight orders of magnitude in the power spectral density (PSD) with a fractal dimension of ~2.5.

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Section: Methodsmentioning

confidence: 99%

Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

et al. 2004

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“…3 Lateral sputtering by GCIB is now being used for low-damage atomic-scale surface smoothing 10,13,15. ͑a͒ Normal incidence and ͑b͒ oblique incidence.FIG.…”

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Current research and development topics on gas cluster ion-beam processes

Yamada¹,

Toyoda²

2005

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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Development of an in situ ultra-high-vacuum scanning tunneling microscope in the beamline of the 15 MV tandem accelerator for studies of surface modification by a swift heavy ion beam Rev. Sci. Instrum. 72, 3884 (2001); 10.1063/1.1405791Surface processing with gas-cluster ions to improve giant magnetoresistance films This report reviews the developing field of ion-beam technology that employs accelerated ions consisting of clusters of a few hundreds to thousands of atoms ͑gas cluster ion-beam technology, GCIB͒. Cluster ion-surface collisions have been found to produce low-energy bombardment effects at very high density, and GCIB processes exhibit unique nonlinear effects that are useful for surface processing applications. The effects include low-energy ion bombardment, lateral sputtering, and low-temperature thin-film formation. GCIB processing has been applied to shallow junction formation; high rate etching; surface smoothing of materials including metals, dielectrics, superconductors, and diamonds; and high-k oxide and diamond-like carbon thin-film deposition. We describe the unique characteristics of GCIB-surface interactions and GCIB process applications for ͑i͒ ultrashallow junction formation and doping in Si, ͑ii͒ surface smoothing of metals, ͑iii͒ selective smoothing of silicon-on-insulator SiC, and other compound semiconductor films, ͑iv͒ integrated circuit back-end-of-the-line processing, and ͑v͒ high-quality multilayer thin-film formation for reliable and durable optical filters.

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Gas Cluster Ion Beam Processing of GaSb and InSb Surfaces

Cited by 2 publications

References 6 publications

Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

Roughness Analysis of Episurfaces Grown on Ion-Beam Processed GaSb Substrates

Current research and development topics on gas cluster ion-beam processes

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