Abstract:Next generation high volume manufacturing lithography tools will likely use CO 2 laser produced plasma sources to generate extreme ultraviolet (EUV) radiation needed for resist exposures. Existing mitigation techniques for out-of-band radiation from these sources result in reduced EUV (13.5 nm) transmission to the resist plane which decreases desired throughput. New methods to suppress the 10.6 μm radiation, which dominates the out-of-band spectrum at the intermediate focus (IF), need to be examined. A spectra… Show more
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