2011
DOI: 10.1109/jdt.2011.2135838
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Gap-Type a-Si TFTs for Backlight Sensing Application

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Cited by 12 publications
(2 citation statements)
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“…There are several photosensitive devices can be made on the same substrate of TFT, including PIN diode [4], phototransistor [5][6][7], gap-type TFTs [8][9]. We consider that gap-type TFT is the best optical device in the under-screen fingerprint sensor for its good sensitivity and low cost owing to the high photocurrent and fully TFT-compatible process [10][11].…”
Section: Introductionmentioning
confidence: 99%
“…There are several photosensitive devices can be made on the same substrate of TFT, including PIN diode [4], phototransistor [5][6][7], gap-type TFTs [8][9]. We consider that gap-type TFT is the best optical device in the under-screen fingerprint sensor for its good sensitivity and low cost owing to the high photocurrent and fully TFT-compatible process [10][11].…”
Section: Introductionmentioning
confidence: 99%
“…Hydrogenated amorphous silicon thin-film transistors (a-Si:H TFTs) are extensively used in switching devices and peripheral driver circuits for active-matrix liquid crystal displays (AMLCDs) owing to their low cost, high uniformity over a large-area substrate, and the maturity of their fabrication process [1]- [8]. The higher photo-sensitivity of a-Si:H TFTs under illumination by visible light in comparison to amorphous-indium-gallium-zinc-oxide (a-IGZO) favors their use in optical sensors in displays, supporting X-ray image sensing, backlighting, and optical input functions [1], [3], [9], [10]. Moreover, the integration of TFT-based optical sensors into a large interactive panel can easily realize multipoint optical inputs, such as those generated using a light emitting diode (LED) pen, without the need for a complex algorithm or an additional sensing module [3].…”
Section: Introductionmentioning
confidence: 99%