Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation

Abstract

Articles you may be interested inDensity of states in tritiated amorphous silicon obtained with the constant photocurrent method J. Appl. Phys. 98, 093705 (2005); 10.1063/1.2123374 Light-induced changes in the gap states above midgap of hydrogenated amorphous silicon J. Appl. Phys. 97, 023707 (2005); 10.1063/1.1823021Comment on "Gap states of hydrogenated amorphous silicon near and above the threshold of microcrystallinity with subtle boron compensation" [Appl.

Explanation of the structural changes in the Si : H thin films by monohydride cluster formation

“…The materials deposited just below the onset of amorphous to microcrystalline transition have been found to possess improved stability and transport properties. The improvement of the material properties have been attributed to the presence of highly ordered regions [24]. Transmission electron micrographs taken on films deposited in this regime suggested presence of some ordered linear like objects distributed in an amorphous matrix [25].…”

A Review of Diffusion and Interfacial Reactions in Sandwich Thin-Film Couples

“…Amorphous/polycrystalline silicon film used in solar cell can be deposited from a gas mixture of silane and hydrogen. Recently use of seed layer to reduce the thickness of the different layers required for multi-junctions solar cell [4] and film with material deposited at the onset of crystallinity of amorphous silicon attracted much interest for solar cell and microelectronic technologies. The presence of nanometer sized grains improved the transport properties and lowered the degradation [5] makes the material compatible for technology uses under the low production cost.…”

Correlation between plasma chemistry, microstructure and electronic properties of Si:H thin films prepared with hydrogen dilution

“…Recently the material deposited at the boundary of amorphous and microcrystalline phases has aroused much interest because of its low degradation under light and improved transport properties [1]. The presence of nanometer size crystalline Si grains with structure different from bulk c-Si has been observed in silicon thin films deposited near the condition of powder formation [2].…”