Gap State‐Modulated Van Der Waals Short‐Term Memory with Broad Band Negative Photoconductance

Abstract

Floating gate memory (FGM), composed of van der Waals (vdW) junctions with an atomically thin floating layer for charge storage, is widely employed to develop logic‐in memories and in‐sensor computing devices. Most research efforts of FGM are spent on achieving long‐term charge storage and fast reading/writing for flash and random‐access memory. However, dynamic modulation of memory time via a tunneling barrier and vdW interfaces, which is critical for synaptic computing and machine vision, is still lacking. Here, a van der Waals short‐term memory with tunable memory windows and retention times from milliseconds to thousands of seconds is reported, which is approximately exponentially proportional to the thickness h‐BN (hexagonal boron nitride) barrier. The specific h‐BN barrier with fruitful gap states provides charge release channels for trapped charges, making the vdW device switchable between positive photoconductance and negative photoconductance with a broadband light from IR to UV range. The dynamic short‐term memory with tunable photo response highlights the design strategy of novel vdW memory vis interface engineering for further intelligent information storage and optoelectronic detection.

Interface Engineering of 2D Materials for Highly Performing Electronic and Energy Devices

“…The CL spectrum corresponds to the defect state in h-BN, which influences the device conductance. Image (B) is reproduced from ref . Copyright 2023 Wiley-VCH.…”

“…In the h-BN, the antisite defect N B V N where the N atom substitutes the B atom close to N vacancy (V N ) has many midgap states, and possible optical transition occurs at the photon energy of 1.92 eV. As shown in Figure B, the heterophase interface of MoSe 2 /h-BN/WSe 2 has a cathodoluminescence (CL) peak at 660 nm (1.88 eV) which corresponds to the antisite defect within the bandgap of h-BN (5.9 eV) . Therefore, carrier transports occur from WSe 2 to MoSe 2 through the antisite defect states of the h-BN.…”