GaP single crystal layers grown on GaN by MOCVD

Li, Shuti; Cao, Jianxing; Fan, Guanghan; Zhang, Yong; Zheng, Shuwen; Sun, Hong‐Bo; Su, J.

doi:10.1117/12.840796

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2013

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“…Then, a 2 μm thick SiN x layer was deposited onto ITO layer. This was because the usual thickness (100-500 nm) [17] of a p-type GaN layer is inadequate for the fabrication of CESs. Also, SiN x has a refractive index similar to that of ITO, and is transparent over the entire visible wavelength range [18].…”

Section: Device Structure and Fabricationmentioning

confidence: 98%

Increased Light Extraction From GaN Light-Emitting Diodes by ${\rm SiN}_{{\rm x}}$ Compound Eyes

Kang

Song

Jang

et al. 2013

IEEE Photon. Technol. Lett.

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We demonstrate GaN-based blue light-emitting diodes (GaN LEDs) with artificial compound eye structures (CESs). The GaN LEDs consist of microlens arrays (MLAs) and antireflective subwavelength structures (SWSs). The CESs, formed on the LED surface by two-step pattern transfer of reflowed photoresist micro patterns and Ag nanoparticles, play an important role in enhancing the light extraction efficiency by reducing both the Fresnel and the total internal reflection. The CES integrated GaN LEDs show an output power enhancement of 93% compared to that of conventional GaN LEDs with flat surface, without any serious degradation of electrical characteristics. Optical simulations by ray-tracing and the rigorous coupled-wave analysis method provide design guidelines for MLAs and SWSs, respectively.Index Terms-GaN-based LEDs, light extraction efficiency, microlens, subwavelength structure, compound eye structures.

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Section: Device Structure and Fabricationmentioning

confidence: 98%