Abstract:The gap filling model of O3-Tetraethylorthosilicate (TEOS) film on atmospheric pressure-chemical vapor deposition (AP-CVD) has never been clarified in detail. In order to clarify the gap filling model, we investigated the relationship between O3-TEOS film formation and the relative permittivity or polarity of organic solvent used for pretreatment. Polar organic solvents containing a proton adsorbed to the underlying layer showed that the C1s signal (284.6 eV) on XPS analysis increased with increasing relative … Show more
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