GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

Limb, J.; Yoo, Dongwon; Ryou, Jae‐Hyun; Lee, W.; Shen, Shyh‐Chiang; Dupuis, R. D.; Reed, Meredith; Collins, Chris; Wraback, Michael; Hanser, Drew; Preble, E. A.; Williams, Nicole; Evans, K. R.

doi:10.1063/1.2219390

Cited by 100 publications

(39 citation statements)

References 18 publications

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“…Progresses in availability of lower GaN DD substrates have been reflected recently in larger area APD [63,64]. As a third generation devices, using HVPE substrates with DD in the 10 5 -10 6 range, larger area avalanche GaN PD have recently presented, and in microplasma-free PD, 50 µm in diameter (many devices of such area will have no dislocations), gains greater than 10 3 were obtained [64].…”

Section: Photodetectors With Internal Gain: Avalanche Uv Detectorsmentioning

confidence: 98%

“…The fact that SiC devices have much lower DD (<10 5 cm -2 ) and low micropipe densities (Ӷ10 2 cm -2 ), seem to give, today, to SiC a leading position to obtain larger area (≥100 µm in diameter) avalanche UV PDs [61,62]. Progresses in availability of lower GaN DD substrates have been reflected recently in larger area APD [63,64]. As a third generation devices, using HVPE substrates with DD in the 10 5 -10 6 range, larger area avalanche GaN PD have recently presented, and in microplasma-free PD, 50 µm in diameter (many devices of such area will have no dislocations), gains greater than 10 3 were obtained [64].…”

Section: Photodetectors With Internal Gain: Avalanche Uv Detectorsmentioning

confidence: 99%

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(Al,In,Ga)N‐based photodetectors. Some materials issues

Muñoz

2007

Physica Status Solidi (b)

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www.pss-b.com filters are needed to stop low energy photons (VIS and infrared light), degradation is produced by UV photons (shorter device lifetime), efficiency lowers, dark current increases markedly with temperature, etc. The development of higher band gap III-arsenides or III-phosphides for UV photodetection did not progress substantially. On the other hand, for high sensitivity UV applications, PMT are needed, being bulky and requering a high-voltage power supply [1][2][3].To avoid the use of filters, to increase efficiency, to lower noise and dark current specially above room temperature, and to achieve visible-blind operation, UV detectors based on wide band gap semiconductors have been studied during the last decade. Thin film synthetic diamond detectors (E g = 5.4 eV, 227 nm, direct gap), were developed and commercialised mainly as polycrystalline photoconductor devices. SiC p-n junction PD (4H-SiC, E g = 3.26 eV; 6H-SiC, E g = 3 eV, indirect gap), have been also available. However, the turning point to make visible-blind UV detectors an appealing reality, to open really new possibilities for UV detection, has been the development of (Al,In,Ga)N semiconductors. The possibility of selecting the cut-off wavelength by adjusting the mole fraction of the ternary or quaternary alloys is unique, so far not being proven by any other wide-band-gap semiconductor family [2].III-nitrides are direct band gap materials, with GaN showing its absorption edge at 360 nm (E g = 3.44 eV) and at 200 nm for AlN (E g = 6.2 eV), and with the ability to form heterojunctions and to withstand high temperatures. Even the 400 nm UV frontier can be reached using (In,Ga)N alloys (band gap assigned today to InN is 0.7 eV). This tunability of the detection edge by just varying the Al(In) mole fraction, and the fact that (Al,In,Ga)N technology is already fully commercial for light emitting diodes, laser diodes (LEDs and LDs, respectively) [4], and it has just started for high electron mobility transistors (HEMTs), are very important points that have made (Al,In,Ga)N alloys the most adequate solution for UV detection in many applications. Besides, the high chemical and thermal stability of GaN, GaN-based detectors are also of interest for high photon energy detection (e.g. VUV and X-rays) and even for high energy particle detection [5].The photoconductive properties of GaN were studied by Pankove and Berkeyheiser in 1974 [6], and in about fifteen years of III-nitrides technology, the first GaN UV photoconductive detectors were reported by Khan in 1992 [7]. Since then, practically all types of PD structures have been developed, directly linked to advances in GaN and AlGaN epitaxial growth, and to progresses in p-type doping and in ohmic and Schottky contact technology. Trying to give a perspective of the developments, we may consider an initial exploratory phase (a proof of concept, first generation of UV detectors, VIS blind), just trying to confirm that GaN and AlGaN PDs (with low-medium Al mole fractions) were feasible. Later, a second ...

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Section: Photodetectors With Internal Gain: Avalanche Uv Detectorsmentioning

confidence: 98%

Section: Photodetectors With Internal Gain: Avalanche Uv Detectorsmentioning

confidence: 99%

(Al,In,Ga)N‐based photodetectors. Some materials issues

Muñoz

2007

Physica Status Solidi (b)

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“…There are several types of III-N UV photodetectors that have been demonstrated, including photoconductors, MSM photodiodes [15], Schottky barrier detectors [16], PIN diodes [17][18][19], and APDs [20][21][22][23][24]. Depending on the type and geometry of devices, the fabrication process can vary.…”

Section: Fabrication and Development Of Iii-nitride Photodetectorsmentioning

confidence: 99%

Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

Dupuis

Ryou

Shen

et al. 2008

Journal of Crystal Growth

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“…Detailed growth techniques were described in [13]. The p-i-n epitaxial layer was grown on an n-type free-standing bulk GaN substrate.…”

Section: Device Design and Fabricationmentioning

confidence: 99%

GaN ultraviolet avalanche photodiodes fabricated on free‐standing bulk GaN substrates

Zhang¹,

Yoo

Limb³

et al. 2008

Phys. Status Solidi (c)

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We report high‐performance MOCVD‐grown GaN ultraviolet (UV) p‐i‐n avalanche photodiodes (APD) on bulk GaN substrates. The fabricated APD achieved avalanche gain of > 3 × 104 and low leakage current density (<10–7 A/cm2) at voltages below 50% of the device avalanche breakdown voltage. To the best of our knowledge, this is the highest linear gain reported to date among III‐N‐based UV APDs. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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GaN ultraviolet avalanche photodiodes with optical gain greater than 1000 grown on GaN substrates by metal-organic chemical vapor deposition

Cited by 100 publications

References 18 publications

(Al,In,Ga)N‐based photodetectors. Some materials issues

(Al,In,Ga)N‐based photodetectors. Some materials issues

Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes

GaN ultraviolet avalanche photodiodes fabricated on free‐standing bulk GaN substrates

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