GaN Transistors for Efficient Power Conversion

Lidow, Alex; Rooij, Michael de; Strydom, Johan; Reusch, David; Glaser, John

doi:10.1002/9781119594406

Cited by 252 publications

(255 citation statements)

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“…The NDR effect has found wide applications in rectifiers, oscillator, frequency multiplier, memory, and fast switching devices . Among all III‐nitrides, outshining bulk gallium nitride (GaN) is a very promising material in various high voltage and RF applications . However, on the other hand, the intrinsic wide bandgap of GaN is a major obstacle in its path for low power electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

Inge

Jaiswal

Kondekar

2017

Adv Materials Inter

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applications. [10][11][12][13] However, on the other hand, the intrinsic wide bandgap of GaN is a major obstacle in its path for low power electronic devices. To counter this problem, researchers have studied bandgap engineering of 2D GaN via functionalizing its edges with different elements/functional groups as well as suitable dopants. [14][15][16][17][18] Owing to state of the art experimental evolution, nowadays it is possible to synthesize and characterize monolayer of various materials including III-V compound semiconductors. [19][20][21] Recently, Balushi et al., [22] have successfully synthesized graphene encapsulated few layer GaN nanosheet on the SiC substrate. Bhattacharya et al., [23] also synthesized 0.6 nm thick 2D GaN in Na-4 mica channels. In another report, GaN nanosheets were found to sustain at fields as high as 5.8 V nm −1 and 4 V nm −1 for AA'A and ABA stacking respectively which is significantly greater than the breakdown field (0.3-0.5 V nm −1 ) of bulk GaN. [24] Thus it can be concluded that a monolayer of GaN can be used for wider applications in the ambient conditions. However, its wide bandgap still remains a remarkable hurdle for realization of various electronic devices. Recently, halogen functionalization (edge passivation) has been adopted to tailor the electronic properties of zigzag edged graphene nanoribbon. [25] It also results in enhancing the stability of nanoribbons which present them as preferred candidate over edge functionalized ZGNR via H atoms. [25] Motivated from this, in the present work, we studied, the structural and electronic properties of zigzag edged GaN nanoribbons (ZGaNNRs) to reveal its potential applications in the upcoming nanodevices considering various possible combinations of F functionalization. The selection of F atom was expected to result in large charge transfer due to its higher electronegativity and therefore enhancing stability.We have studied the electronic properties of different configurations of ZGaNNRs for different widths (N z = 4-8 dimers). The energy states at the edges of ZGaNNRs significantly alter the band structure and electronic properties of the nanoribbon as compared to energy states in central region. The structural stability for each considered configuration is studied and compared. The NDR effect in 2D material-based devices is observed because of the variation in transmission coefficient and difference of the Fermi functions affected by density of states (DOS).Gallium nitride (GaN) is a commonly used material for the high power electronic devices. Its 2D analog (layered GaN) can be a promising material in low power applications due to its flexible bandgap. This study investigates the structural stability, electronic and transport properties of zigzag edged GaN nanoribbons (ZGaNNRs), considering various edge passivations to gauge its potential for beyond silicon electronic devices. Present density functional theory based calculations reveal that metallic/semiconducting nature can be obtained in ZGaNNRs via controlled edge fluorin...

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Section: Introductionmentioning

confidence: 99%

Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

Inge

Jaiswal

Kondekar

2017

Adv Materials Inter

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“…First, use better devices to further reduce the device conduction loss and switching loss. This becomes possible with the development of wide-bandgap devices like GaN [17]. Details will be discussed in the device selection and loss analysis.…”

Section: Transformer Design Of Intermediate Bus Convertermentioning

confidence: 99%

Optimal Design of Megahertz $LLC$ Converter for 48-V Bus Converter Application

Cai

Ahmed

et al. 2020

IEEE J. Emerg. Sel. Topics Power Electron.

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The intermediate bus architecture employing the 48V bus converter is one of the most popular power architecture. 48V to 12V bus converter has wide applications in telecommunications, networks, aerospace, and military, etc. However, today's state of the art products has low power rating or power density and becomes difficult to satisfy the demand of increasing power of the loads. To improve the current design, a GaN (Gallium Nitride) based two-stage solution is proposed for the bus converter. The first stage Buck converter regulates the 40V to 60V variable input to a fixed 36V bus voltage. The second stage LLC converter convert the 36V to 12V by a 3:1 transformer. The whole solution achieves the fixed frequency control. The thesis focus on the detail design and optimization of LLC converter, especially its transformer. To have high density and high efficiency, the transformer design becomes critical at MHz frequency. The matrix transformer concept is applied and a merged winding structure is used for flux cancellation, which effectively reduces the AC winding losses. A new fully interleaved termination and via design is proposed. It achieves significant reduction in loss and leakage flux. In addition, to study the current sharing of parallel winding layers, a 1-D analytic model is proposed and a symmetrical winding layer scheme is used to balance the current distribution. The hardware is built and tested. The proposed two-stage converter achieves the best performance compared to the current market. Intermediate bus architecture (IBA) has wide applications in telecommunication, server and computing, and military power supplies. The intermediate bus converter (IBC) is the key stage in the IBA, where the DC bus voltage from the front-end power supply is converted to a lower intermediate bus voltage. Traditional IBC suffers from bulky magnetic components including inductors and transformers.This work illustrates the design and implementation of a two-stage IBC, where the firststage Buck converter will provide regulation and the second stage LLC converter will provide isolation. Thanks to the soft-switching capability of LLC, the magnetic volume can be significantly reduced by raising the switching frequency of the converter. Therefore, planar magnetics can be used and placed directly inside of the printing circuit board (PCB), which allows for higher power densities and easy manufacturing of the magnetics and overall converter. However, as the frequency goes higher, the AC losses of the transformer caused by the eddy current, skin effect, and proximity effect become dominant. As a result, high-frequency transformer design becomes the key for the converter design. First, matrix transformer concept is applied to distribute the high current and reduce the conduction loss. Second, a novel merged winding structure is proposed for better transformer winding interleaving. Third, a new terminal structure of the transformer is proposed. Finally, the current sharing between parallel windings are modeled and studied. All the eff...

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Section: Interruptores Gan Hemtunclassified

“…Na literatura, são amplamente difundidas as limitações acerca do uso do silício para a confecção de interruptores de potência [4]- [8]. Assim, com a proximidade do limite físico dos interruptores baseados puramente em silício, o crescimento de tecnologias wide bandgap, como o carbeto de silício e o nitreto de gálio, torna-se iminente no ramo da Eletrônica de Potência [4], [5]. No âmbito de topologias PFC, o uso de estratégias para comutação suave com o emprego de interruptor de GaN HEMTs proporcionam medições de rendimento acima de 99% e valores elevados de densidade de potência [9]- [11].…”

Section: Interruptores Gan Hemtunclassified

Retificador PFC Monofásico Bridgeless Baseado em Interruptores GaN HEMT Empregando Estratégia de Modulação Pwm de Alta Resolução Implementada em FPGA

Lohn¹,

Carvalho²,

Arbugeri³

et al. 2019

Eletrônica de Potência

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Interruptores de potência baseados em materiais do tipo wide bandgap propiciam o uso de elevada frequência de comutação sem aumento significativo das perdas do conversor. O artigo propõe a validação experimental de um retificador boost bridgeless com correção ativa do fator de potência, empregando interruptores de Nitreto de Gálio e utilizando um modulador de alta resolução. O protótipo, com uso de 500 kHz na frequência de comutação, é validado com tensão de suprimento em 127 V e 60 Hz, acionando uma carga passiva de 915 W com tensão média de 220 V. Os resultados obtidos demonstram a funcionalidade do conversor estático operando com 96% de rendimento em plena carga, assim como a operação da estratégia de modulação PWM de alta resolução e de controle digital implementadas em FPGA.

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GaN Transistors for Efficient Power Conversion

Cited by 252 publications

References 0 publications

Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

Realizing Negative Differential Resistance/Switching Phenomena in Zigzag GaN Nanoribbons by Edge Fluorination: A DFT Investigation

Optimal Design of Megahertz $LLC$ Converter for 48-V Bus Converter Application

Retificador PFC Monofásico Bridgeless Baseado em Interruptores GaN HEMT Empregando Estratégia de Modulação Pwm de Alta Resolução Implementada em FPGA

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