GaN thin films deposition by laser ablation of liquid Ga target in nitrogen reactive atmosphere

Dinescu, M.; Verardi, P.; Boulmer‐Leborgne, C.; Gerardi, C.; Mirenghi, L.; Sandu, V.

doi:10.1016/s0169-4332(97)00705-8

Cited by 44 publications

(22 citation statements)

References 12 publications

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“…3c) and Ga2p (Fig. 3d) indicate the presence of Ga-N type of bonding as these peak positions are in close agreement with that of the literature XPS data on GaN films [14]. The N1 s peak position of the N doped ZnO film is very much different from that of the N1 s peak position of the codoped film (Fig.…”

Section: Chemical Bonding Statesupporting

confidence: 88%

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Fabrication of the low-resistive p-type ZnO by codoping method

Joseph

Tabata

Saeki

et al. 2001

Physica B: Condensed Matter

230

114

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We have demonstrated the possibility of growing p-type ZnO films by a pulsed laser deposition technique combined with plasma gas source. The p-type ZnO film has been fabricated by passing N 2 O gas through an electron cyclotron resonance (ECR) or RF plasma source. N 2 O gas is effective to prevent ''O'' vacancy from occurring and introduce ''N'' as an acceptor, at the same time. With Ga and N codoping technique, we have observed a room temperature resistivity of 0.5 O cm and a carrier concentration of 5 Â 10 19 cm À3 in ZnO film on glass substrate. Two-step growth, with a thin ZnO template layer formed at high temperature, is quite effective to realize a well crystallized growth at low temperature. The observed p-type ZnO films will open the door for practical applications in various oxide electronic devices. #

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Section: Chemical Bonding Statesupporting

confidence: 88%

“…Here the N1 s peak occurs close to what is observed with pure N doped case. No peak could be seen for N1 s, which corresponds, to the Ga-N type of bonding [14]. This is quite evident, as no Ga peak could be seen for the Ga2p, as shown in Fig.…”

Section: Chemical Bonding Statementioning

confidence: 71%

Fabrication of the low-resistive p-type ZnO by codoping method

Joseph

Tabata

Saeki

et al. 2001

Physica B: Condensed Matter

230

114

View full text Add to dashboard Cite

show abstract

“…The core level values of gallium were found to have a positive shift with respect to elemental gallium. Dinescu et al [23] and Elkashef et al [22] have reported the values of the Ga 2p 3/2 peak at 1117 eV and 1119.2 eV in their GaN films respectively. Figure 7(c) shows Ga 3d spectra for the films.…”

Section: Electrical Characterizationmentioning

confidence: 97%

Structural and Electrical Characterization of GaN Thin Films on Si(100)

Chaudhari¹,

Chinchamalatpure²,

Ghosh³

2011

AJAC

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The Gallium Nitride (GaN) layers grown on silicon substrates by electron beam evaporation technique. Xray diffraction revealed that polycrystalline GaN was obtained indicating the enhance crystallinity of the films with annealing temperature at 600˚C. Crystalline quality of the GaN films was determined by Scanning Electron Microscopy (SEM). The crystalline size increases with increasing annealing temperature. The fabricated MIS structures were characterized using Capacitance-Voltage (C-V) measurements, the capacitance remains nearly constant over a large range in higher negative as well as over a large range in higher positive gate voltages and Current-Voltage (I-V) measurements shows low forward and reverse current possibly due to high density defect formation in the thin layer of gallium nitride during its growth.The film is characterized by X-Ray photoelectron spectroscopy (XPS). The XPS spectra show that formation of pure GaN without presence of elemental gallium and Ga 2 O 3 in this film.

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“…Up to date, very few systematic studies are known on laser ablation of liquid metals. Some examples include comparison of ablation dynamics for metals in solid and liquid states [71][72][73], thermal modeling of molten gallium ablation to understand the causes of high energies of the expanding ablation products [74], experiments on imaging the laser ablation dynamics and the irradiated surface response [75,76], generation of hot electrons and X-rays under fs laser ablation of molten metals [77], and GaN film deposition by pulsed laser ablation of liquid gallium in a nitrogen atmosphere [78]. In [70], during multishot ns laser irradiation (IR and UV) of liquid metals in the presence of reactive ambient gases, a tower-like structure (called below "microtower") with the diameter somewhat exceeding the irradiation spot size was growing on the irradiated surface at an average rate of 3-20 μm per pulse.…”

Section: Role Of Plasma Chemistry: "Microtower" Growth Upon Ablation mentioning

confidence: 99%

Impacts of Ambient and Ablation Plasmas on Short- and Ultrashort-Pulse Laser Processing of Surfaces

et al. 2014

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Abstract:In spite of the fact that more than five decades have passed since the invention of laser, some topics of laser-matter interaction still remain incompletely studied. One of such topics is plasma impact on the overall phenomenon of the interaction and its particular OPEN ACCESSMicromachines 2014, 5 1345 features, including influence of the laser-excited plasma re-radiation, back flux of energetic plasma species, and massive material redeposition, on the surface quality and processing efficiency. In this paper, we analyze different plasma aspects, which go beyond a simple consideration of the well-known effect of plasma shielding of laser radiation. The following effects are considered: ambient gas ionization above the target on material processing with formation of a "plasma pipe"; back heating of the target by both laser-driven ambient and ablation plasmas through conductive and radiative heat transfer; plasma chemical effects on surface processing including microstructure growth on liquid metals; complicated dynamics of the ablation plasma flow interacting with an ambient gas that can result in substantial redeposition of material around the ablation spot. Together with a review summarizing our main to-date achievements and outlining research directions, we present new results underlining importance of laser plasma dynamics and photoionization of the gas environment upon laser processing of materials.

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GaN thin films deposition by laser ablation of liquid Ga target in nitrogen reactive atmosphere

Cited by 44 publications

References 12 publications

Fabrication of the low-resistive p-type ZnO by codoping method

Fabrication of the low-resistive p-type ZnO by codoping method

Structural and Electrical Characterization of GaN Thin Films on Si(100)

Impacts of Ambient and Ablation Plasmas on Short- and Ultrashort-Pulse Laser Processing of Surfaces

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