GaN thin film: Growth and Characterizations by Magnetron Sputtering

Saqib, Qazi Muhammad; Ho, J.; Kwok, Hoi Sing

doi:10.1016/j.surfin.2021.101364

Cited by 16 publications

(6 citation statements)

References 28 publications

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“…The peaks can be assigned to various Raman modes as predicated for wurtzite GaN. [ 24 ] However, most of these peaks match with the Raman modes predicted for single‐crystal sapphire and hence can be assigned to sapphire (i.e., substrate used) as well (marked in Figure 3). The sapphire has a corundum crystal structure belonging to the space group

D_{3 d}

[ 25 ] , where

E_{normalg} and A_{1 g}

modes are Raman active.…”

Section: Resultsmentioning

confidence: 91%

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Rajgoli

Hinde²,

Sant

et al. 2023

Physica Status Solidi (b)

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Among other group III-nitride semiconductor materials, gallium nitride (GaN) has received considerable attention for fabricating optical devices mainly in the UV region. [1] Along with this for fabricating a number of electronic gadgets, for example, high-power and high-frequency devices, [2] high-speed data transmitters, [3] high-voltage switching devices, [4,5] etc., extensive use of GaN is also well known. This demonstrates that GaN as a material has not only received special attention by the scientific community but also acknowledged due to its commercial importance. It's high electron saturation velocity (%1 Â 10 7 cm s À1 ), greater breakdown field than the Si, [6] and sustainability to work at high operating temperatures are key to realize such applications. The material has a wide bandgap of %3.4 eV at 300 K. [6] Excellent solubility with the other III-nitride semiconductor materials especially InN and AlN has enabled researchers to tune the bandgap of a material as per requirement. Hence in the past few years, GaN is extensively used to fabricate optoelectronic devices such as high-power light-emitting diodes. [7] Most of these devices are demonstrated using epitaxial films of GaN grown along c-axis, that is, [1] orientation. The performance and the efficiency of these devices mainly depend on the quality growth of GaN films with suitable dopants incorporated to have better control on its physical properties. Mostly epitaxial growth of GaN on GaN substrate is preferred but it is extremely expensive. Hence, epitaxial growth of GaN on low-cost substrates, for example, sapphire, Si, etc., for its commercial uses is justifiable. To grow epitaxial films of GaN on sapphire conventional methods, for example, molecular beam epitaxy (MBE), [1] metal-organic chemical vapor deposition (MOCVD), [8] atomic layer deposition (ALD), [9] metal-organic vapor-phase epitaxy (MOVPE) [10] are preferably used due to their due advantages. The use of a pulsed laser deposition (PLD) for growing GaN films is also demonstrated, taking its unique capabilities into consideration. [11,12] However, it is observed that optoelectronic devices fabricated using c-plane GaN suffer from piezoelectric polarization effect, affecting the carrier recombination lifetime and quantum efficiency of devices known as quantum conferment Stark effect. [13] Avoiding the Stark effect quality growth of GaN films along nonpolar surfaces is suggested. Hence, researchers are intensively studying the growth of GaN films along nonpolar surfaces such as m-and a-planes. [13][14][15] Mostly growth of a-plane GaN using r-plane sapphire, (010) LAO substrate, etc. is widely

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D_{3 d}

[ 25 ] , where

E_{normalg} and A_{1 g}

modes are Raman active.…”

Section: Resultsmentioning

confidence: 91%

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Rajgoli

Hinde²,

Sant

et al. 2023

Physica Status Solidi (b)

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“…The lowest peak at 17.42 eV is attributed to elemental Ga, revealing the presence of uncoordinated Ga. 21 Figure 5c shows the N 1s spectra of GaN film, and the broad spectra can be fitted into five component. The highest binding energy peak located at 397.19 eV confirms the N−Ga bonding, the three peaks at 392.76, 394.73, and 395.81 eV are respectively assigned to the Ga-LMM signals, 22 and the additional peak at 399.15 eV is due to N−H bonding. 23,24 The O 1s spectra shown in Figure 4d are fitted into two components, and these two peaks can be attributed to Ga x O y and the absorbed oxygen, which confirm that the film surface is contaminated with oxygen impurities.…”

Section: Surface Chemical State Analysismentioning

confidence: 90%

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Wang,

Xu,

Wang

et al. 2023

Crystal Growth & Design

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Langasite (La 3 Ga 5 SiO 14 , LGS) family crystals are known for their piezoelectric properties, which make them widely applicable in surface acoustic wave (SAW) devices. The group-III metal nitrides formed on LGS substrates are found to enable significant extension of SAW devices to higher-frequency ranges. However, the Ga element in LGS crystals is observed to volatilize in H 2 at high temperatures, forming Ga droplets and degrading the film quality. This study reports the growth of GaN films on the Ga-free LGS-type crystal Ca 3 NbAl 3 Si 2 O 14 (CNAS) by metal−organic chemical vapor deposition (MOCVD), and the CNAS is stable in MOCVD. The as-grown GaN films are continuous and smooth with a roughness of 0.369 nm. The epitaxial relationship between GaN and CNAS is GaN(0001)//CNAS(0001) and GaN(10−12)//CNAS(21−32). The mixed dislocations are found to be dominant type of dislocations of the GaN films on CNAS. The GaN films also exhibit good optical properties and a compressive stress of 0.17 GPa. Thus, the results indicate that the Ga-free LGS-type crystals have great potential for applications in the epitaxial growth of GaN materials.

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“…In the last decade, the preparation of GaN by sputter deposition has, therefore, become a widely investigated field. [18][19][20][21][22] The deposition viability of highly crystalline GaN films by reactive sputtering from a liquid gallium target was shown by Junaid. 21 For manufacturing devices based on GaN, the ability to control the resistivity by incorporating dopants in the layers to a high concentration and in a controlled manner is of paramount importance.…”

Section: Introductionmentioning

confidence: 99%

Conductive n-type gallium nitride thin films prepared by sputter deposition

Loretz¹,

Tschirky²,

Isa³

et al. 2022

Journal of Vacuum Science &Amp; Technology A

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Given the recent increase in the demand for gallium nitride (GaN) in different markets like optoelectronics and power devices, the request for epitaxially grown GaN will further increase. To meet this high demand, higher throughput and more economical manufacturing technologies must be advanced. In this work, GaN thin films are deposited by reactive sputter deposition from a liquid gallium target at a substrate temperature of 900 °C. The layers are grown epitaxially on c-plane oriented sapphire in an industrial-scale sputter tool from Evatec AG. Due to the growth rate of >1 nm/s and the fast substrate heat-up time, the throughput in a production setup can be increased compared to other GaN growth techniques. The resistivity of the intrinsic insulating GaN can be lowered by intentional Si doping during the sputter deposition process by three orders of magnitude. Thereby, conductive n-type GaN can be grown with different dopant amounts. The carrier mobility of the sputter deposited film is 45 cm2 V−1 s−1 at a carrier concentration of 1.1 × 1020 cm−3 based on room temperature Hall measurements using a van der Pauw geometry. The lowest resistivity reaches 1300 μΩ cm, which is confirmed by sheet resistance measurements. Undoped films exhibit an x-ray diffraction rocking curve full width at half maximum of 0.2°, which increases up to 0.5° for highly Si-doped layers. The presented results show that GaN prepared by reactive sputter deposition from a liquid gallium source is a viable alternative to conventional deposition techniques for GaN.

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GaN thin film: Growth and Characterizations by Magnetron Sputtering

Cited by 16 publications

References 28 publications

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Nonpolar Growth of GaN Films on Polar Sapphire Substrate Using Pulsed Laser Deposition: Investigation of Substrate Temperature Variation on the Quality of Films

Growth of Single-Crystalline GaN Films on Ga-Free Langasite-Type Crystals by Metal–Organic Chemical Vapor Deposition

Conductive n-type gallium nitride thin films prepared by sputter deposition

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