GaN Power Transistors on Si Substrates for Switching Applications

Ikeda, Nariaki; Niiyama, Yuki; Kambayashi, Hiroshi; Sato, Yoshiaki; Nomura, Takahiro; Kato, S.; Yoshida, Seikoh

doi:10.1109/jproc.2009.2034397

Cited by 478 publications

(218 citation statements)

References 25 publications

Supporting

Mentioning

216

Contrasting

Unclassified

Order By: Relevance

“…The AlN-HEMTs have an AlN gate dielectric layer deposited at a growth temperature of 400°C by using a BENEQ TFS 200 ALD reactor (Beneq Oy, Vantaa, Finland). Before AlN deposition, the surface native oxide was removed by dipping the samples in HCl:H 2 O (1:10) for 60 s. Trimethylaluminum (TMA) and NH 3 have been utilized as aluminum and nitrogen sources, respectively. During all growth experiments, the NH 3 gas flow rate was 100 sccm, exposure time was 0.9 s, TMA pulse time was 0.2 s, and purge time in between precursor pulses was 9 s. A total of 100-cycle AlN layers were deposited on the samples.…”

Section: Methodsmentioning

confidence: 99%

“…AlGaN/GaN-based high-electron-mobility transistors (HEMTs) are capable of delivering excellent performance such as high electron mobility, high saturation current, low on-resistance, and large breakdown voltage, all of which make AlGaN/GaN HEMTs suitable for RF and power applications [1][2][3]. However, the conventional AlGaN/GaN HEMTs using Schottky gates suffer from low turn-on voltage due to low Schottky barrier between gate metal and AlGaN.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

Liu¹,

Zhao²,

Zhang³

et al. 2016

Nano Online

View full text Add to dashboard Cite

Recently, AlN plasma-enhanced atomic layer deposition (ALD) passivation technique had been proposed and investigated for suppressing the dynamic on-resistance degradation behavior of high-electron-mobility transistors (HEMTs). In this paper, a novel gate dielectric and passivation technique for GaN-on-Si AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MISHEMTs) is presented. This technique features the AlN thin film grown by thermal ALD at 400°C without plasma enhancement. A 10.6-nm AlN thin film was grown upon the surface of the HEMT serving as the gate dielectric under the gate electrode and as the passivation layer in the access region at the same time. The MISHEMTs with thermal ALD AlN exhibit enhanced on/off ratio, reduced channel sheet resistance, reduction of gate leakage by three orders of magnitude at a bias of 4 V, reduced threshold voltage hysteresis of 60 mV, and suppressed current collapse degradation.

show abstract

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

Liu¹,

Zhao²,

Zhang³

et al. 2016

Nano Online

View full text Add to dashboard Cite

show abstract

“…1,2 The extremely high sheet carrier concentration, mobility and saturation velocity of two-dimensional electron gas (2DEG) near heterointerface along with a high breakdown field of GaN pushes the limits of this technology beyond the Si and SiC counterparts. Despite the claim of record high sheet carrier density and mobility, the degradation of 2DEG properties are influenced by crystalline quality of AlGaN/GaN layers in which threading dislocations propagate from the underlying buffer and substrate interface during growth.…”

Section: Introductionmentioning

confidence: 99%

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

2014

View full text Add to dashboard Cite

The crack-free metal-organic chemical vapor deposition (MOCVD) grown AlGaN/GaN heterostructures on Si substrate with modified growth conditions of AlN nucleation layer (NL) and its influence on the electrical and structural properties of conductive GaN layer are presented. From the Hall electrical measurements, a gradual decrease of two-dimensional electron gas (2DEG) concentration near heterointerface as the function of NL thickness is observed possibly due to the reduction in difference of piezoelectric polarization charge densities between AlGaN and GaN layers. It also indicates that the minimum tensile stress and a relatively less total dislocation density for high pressure grown NL can ensure a 20 % increment in mobility at room temperature irrespective of the interface roughness. The thickness and pressure variations in NL and the subsequent changes in growth mode of AlN contributing to the post growth residual tensile stress are investigated using X-ray diffraction and Raman scattering experiments, respectively. The post growth intrinsic residual stress in top layers of heterostructures arises from lattice mismatches, NL parameters and defect densities in GaN. Hence, efforts to reduce the intrinsic residual stress in current conducting GaN layer give an opportunity to further improve the electrical characteristics of AlGaN/GaN device structures on Si.

show abstract

“…However, use of AlN substituting AlGaN as barrier layer is getting popularity nowadays for Al-rich barrier thickness is an efficient way to realize normally-off [3], [4] devices with the benefit of circuit simplicity and safety while maintaining a high polarization charge density [5]. Achievement of high-performance enhancement mode AlN/GaN/AlGaN double-heterojunction field effect transistor (DHFET) has been demonstrated using an unique in situ SiN cap layer on top of ultrathin 2-nm AlN barrier layer [6].…”

Section: Introductionmentioning

confidence: 99%

Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor

Khan¹

2013

JEEE

View full text Add to dashboard Cite

Abstract:We have argued that the nature of surface potential variation with gate voltage of AlN/GaN/AlGaN Double Heterojunction Field Effect Transistor (DHFET) is no different from that of the conventional GaAs/AlGaAs HEMT devices. Necessary simulated band diagrams have been presented to justify our claim and we have also proposed a nonlinear expression for Fermi level (E F ) variation with the two-dimensional electron gas density (2DEG). We have showed that our proposed expression provides better agreement with the numerical solution than the previous approximations. Besides, expression of surface charge density (n s ) variation with gate voltage (V G ) obtained using our proposed model, shows better fit with the numerical simulation data in wide range of bias conditions.

show abstract

GaN Power Transistors on Si Substrates for Switching Applications

Cited by 478 publications

References 25 publications

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

AlGaN/GaN MISHEMTs with AlN gate dielectric grown by thermal ALD technique

Influence of strain induced by AlN nucleation layer on the electrical properties of AlGaN/GaN heterostructures on Si(111) substrate

Analytical Surface Charge Control Model for AlN/GaN/AlGaN Double Heterojunction Field-Effect Transistor

Contact Info

Product

Resources

About