GaN-on-Sapphire Vertical Trench MOSFET Array with High-Performance Ultraviolet (UV) Photoresponse

Liu, Hangzan; Wang, Ye; Gao, Wei; Han, Lixiang; Wang, Xiaozhou; Li, Jingbo

doi:10.1021/acsaom.3c00200

Cited by 2 publications

(2 citation statements)

References 36 publications

(49 reference statements)

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“…However, the latter structure displays a slower response time than that of the p-GaN gate. In addition, GaN photodetectors with other structures, such as MOSFET-type, GaN HEMT-type with sandwiched p-GaN layers, and double channels, have also achieved good photodetection performance.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p-GaN Layer

Liu,

Wang,

Liu

et al. 2024

ACS Appl. Electron. Mater.

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GaN, due to its large band gap and high carrier mobility, has been widely used in fast-response ultraviolet (UV) photodetectors (PDs). The existing junction-based and twodimensional electron gas (2DEG)-based devices have different focuses on the performance of ultraviolet detection. To achieve comprehensive performance, we fabricate a high-performance UVPD utilizing a GaN recessed-gate high electron mobility transistor (HEMT) integrated with a p-GaN buried layer. Benefiting from the effective p-GaN/u-GaN depletion junction, the device has a low dark current of 1.75 × 10 −9 A at a voltage bias (V ds ) of 2 V. Under 365 nm illumination, the recovery of 2DEG is obtained and results in an ultrahigh photocurrent exceeding 1 mA at V ds = 2 V. As a result, a maximum responsivity (R) of 532 A/W, an external quantum efficiency of 1.81 × 10 5 %, and a specific detectivity (D*) of 1.09 × 10 14 Jones are attained at a light power density (P) of 0.24 mW cm −2 . Moreover, the influence of oxygen plasma treatment on the gate recess is explored. The response time is shortened from 1.07/1.20 to 0.79/1.05 ms, and the maximum I light /I dark ratio is increased by more than 10 times. Such high performance substantiates that the structure of GaN recessed-gate HEMT with p-GaN buried layer architecture holds great promise for the creation of an outstanding UV photodetector.

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Section: Introductionmentioning

confidence: 99%

High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p-GaN Layer

Liu,

Wang,

Liu

et al. 2024

ACS Appl. Electron. Mater.

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“…In particular, GaN-based UV PDs are potential candidates for various UV applications because of their excellent optical and electrical properties including their wide direct band gap of 3.4 eV and high saturated electron drift velocity . Various traditional architectures of GaN-based PDs, including metal–oxide–semiconductor (MOS) PDs, p–n photodiodes, p–i–n photodiodes, Schottky barrier photodiodes, and metal–semiconductor–metal PDs, , have been investigated over the last 20 years.…”

Section: Introductionmentioning

confidence: 99%

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

Wang,

Cai,

et al. 2024

ACS Appl. Electron. Mater.

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In recent years, an ultraviolet (UV) photodetector (PD) utilizing two-dimensional electron gas (2DEG) formed at the AlGaN/GaN heterostructure as a GaN-based recessed-gate high-electron-mobility transistor (HEMT) has become a hot topic for UV and solar blind detection. Herein, a GaN-based HEMT UV PD with a recessed gate was prepared, and the conductive channel is closed due to the GaN-based recessed gate, which keeps the device normally off without a p-GaN gate or extra gate bias; the 2DEG is fully depleted with an extremely low dark current density of 1.87 × 10 −6 mA/mm under dark conditions. Under 365 nm UV irradiation, the conductive region is restored and the device exhibits a high photo-to-dark current ratio (PDCR) of 7 × 10 8 , a peak responsivity of 1.75 × 10 4 A/W, a high specific detectivity (D*) of 4.87 × 10 16 Jones, and a superior UV-tovisible rejection ratio of 2.9 × 10 6 . Moreover, a fast response time of 1.55/1.60 ms can be maintained, which is ascribed to the use of triethylgallium in intrinsic GaN (i-GaN) epitaxy to achieve improved crystalline quality, the incorporation of a doped AlGaN layer to reduce the scattering of 2DEGs by positive polarity impurities, and the implementation of asymmetric electrodes for rapid separation and transfer of photogenerated electron−hole pairs. The results indicate that our designed recessed-gate AlGaN/GaN HEMT is an ideal UV PD with high responsivity, low dark current, and rapid response time.

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GaN-on-Sapphire Vertical Trench MOSFET Array with High-Performance Ultraviolet (UV) Photoresponse

Cited by 2 publications

References 36 publications

High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p-GaN Layer

High-Performance Ultraviolet Photodetector Arrays Based on Recessed-Gate HEMT with a Buried p-GaN Layer

A Low-Dark-Current and High-Responsivity Ultraviolet Photodetector Based on a Recessed-Gate AlGaN/GaN Enhanced-Type High-Electron-Mobility Transistor

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