GaN nanowire field emitters with the adsorption of Pt nanoparticles

Cui, Zhen; Ke, Xizheng; Li, Enling; Zhao, Taifei; Qi, Qingping; Yan, Jie; Ding, Yingchun; Liu, Tong

doi:10.1039/c7ra02568h

Cited by 27 publications

(5 citation statements)

References 33 publications

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“…24 Because of unavailability of native substrates, GaN is always grown on non-native or foreign substrates like silicon and sapphire. [20][21][22][23]25,26 For epitaxial deposition of thin films, it is highly recommended to have a defect-free substrate and a surface which exhibits a good crystalline surface quality. Also, the substrates should possess good mechanical strength with a high melting point so as to withstand high temperature and harsh environments.…”

Section: Introductionmentioning

confidence: 99%

“…Numerous thin-film deposition techniques such as metal–organic chemical vapor deposition (MOCVD), chemical vapor deposition (CVD), plasma-enhanced CVD, molecular beam epitaxy (MBE), and hydride vapor phase epitaxy (HVPE) are being employed for the growth of GaN NWs. − Because of its easiness, CVD serves as the conventionally preferred technique for the growth of NWs. The general requirements in the CVD system for the growth of NWs of good quality have been described elsewhere …”

Section: Introductionmentioning

confidence: 99%

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Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

2019

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Growth of gallium nitride nanowires on etched sapphire and GaN substrates using binary catalytic alloy were investigated by manipulating the growth time and precursor-to-substrate distance. The variations in behavior at different growth conditions were observed using X-ray diffractometer, Raman spectroscopy, X-ray photoelectron spectroscopy, cathodoluminescence spectroscopy, optical microscopy, atomic force microscopy, and scanning electron microscopy. It was noticed that, in respect of both the substrates, when growth time and/or precursor-to-substrate distance is increased, thickness of the nanowires around the etch pits remains unaltered, but there is variation in the density of nanowires. In addition, formation of gallium nitride microwires within the etch pits was also observed on etched sapphire substrates. Similarly, the thickness and density of the microwires were found to increase with increase in growth time and decrease with increase in precursor-to-substrate distance. The dimensionality scaling of gallium nitride was found to have a positive effect in improving the luminescence property and band gap of the grown nanowires. This method of nanowire growth can be helpful in increasing the probability of multiple reflections in the materials which makes them a suitable candidate for optoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

2019

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“…The field emission properties of the as-synthesized GaN NWs were compared with those of pure GaN NWs that have been reported previously. 43,46,47 The turn-on field of our NWs (4.8−6 V/μm) was lower than those of the reported pure GaN NWs (7−13 V/μm). Thus, our GaN NWs exhibited superior field emission properties, which can be attributed to the pyramid island structures that had large surface areas and length to diameter ratios.…”

Section: Crystal Growth and Designmentioning

confidence: 62%

Direct Growth of GaN Nanowires by Ga and N₂ without Catalysis

Feng

Wang

Liang

et al. 2019

Crystal Growth & Design

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Gallium nitride nanowires (GaN NWs) are commonly synthesized using harsh/toxic conditions (e.g., ultrahigh vacuum, high substrate temperature, toxic materials, etc.) or by catalytic conditions. In this work, GaN NWs were grown on graphite substrates by the direct reaction of Ga atoms with excited N plasma without the need for a catalyst. This was achieved using plasma enhanced chemical vapor deposition (PECVD) under moderate vacuum conditions and temperatures below 900 °C. The GaN NWs consisted of polycrystalline nanostructures that appeared as pyramidal islands, with diameters from 90 to 200 nm and lengths from 4 to 20 μm. A model for the mechanism of nucleation and growth of the GaN NWs is proposed. The morphology and quality of the GaN NWs varied significantly depending on the fabrication parameters that were used. Moreover, they exhibited desirable photoluminescence (PL) and field emission (FE) properties. This method shows great promise for the simple, low cost, and environmentally friendly fabrication of high-purity NWs, which may lead to improved GaN NW-based devices.

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“…[1][2][3] GaN has been widely studied as a material for ultraviolet light and field electron-emitting devices due to its good electrical emission properties, low electron affinity, and stable physical and chemical properties. [4][5][6][7][8][9][10] Vacuum photodetectors made from photoemission materials have the merits of a wide optical dynamic range, good high-temperature performance, low dark current, and high signal-to-noise ratio. Therefore, they still play an irreplaceable role in weak radiation detection and high-response speed applications though they have been replaced by solid-state photodetectors in many scenarios.…”

Section: Introductionmentioning

confidence: 99%

Research on Field‐Assisted Gallium Nitride Nanorod Array Photocathode

Liu

Zhangyang

2022

Physica Status Solidi (b)

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To improve the electron collection efficiency of gallium nitride (GaN) nanorod array photocathode, external electric field is used to assist collect photoelectrons and a theoretical model of field‐assisted photoelectric emission for GaN nanorod array is established herein. The results indicate that inclined incident light can improve the photoelectron collection efficiency on the side surface of the nanorod and that external electric field can promote the drifting of the photoelectron to the top surface of the nanorod. The square array with a filling fraction of 0.7 reaches its maximum photoelectron collection efficiency at the incident angle of 5° and field intensity of 0.1 V μm−1. This paper might play a theoretical guiding role in the fabrication of photodetectors with high photoelectric conversion efficiency.

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GaN nanowire field emitters with the adsorption of Pt nanoparticles

Cited by 27 publications

References 33 publications

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

Direct Growth of GaN Nanowires by Ga and N₂ without Catalysis

Research on Field‐Assisted Gallium Nitride Nanorod Array Photocathode

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GaN nanowire field emitters with the adsorption of Pt nanoparticles

Cited by 27 publications

References 33 publications

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

Direct Growth of GaN Nanowires by Ga and N2 without Catalysis

Research on Field‐Assisted Gallium Nitride Nanorod Array Photocathode

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Direct Growth of GaN Nanowires by Ga and N₂ without Catalysis