Abstract:The growth of heterostructure of n-type GaN/AlN/Si(111) is carried out using the molecular beam epitaxy (MBE) Veeco model Gen II system. The surface morphology of the as-grown GaN sample showed pits on the GaN surface in a ratio small than those found by other research groups. Porous GaN samples were synthesized by an electrochemical etching technique combined with increasing the current density to 75 mA/cm2. The formation of pore structures are of different sizes, the etched surface became hexagonal, and pore… Show more
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