GaN MOSFET with liquid phase deposited oxide gate

Lee, Kuan Wei; Chou, Dei-Wei; Wu, Hou Run; Huang, Jian; Wang, Yeong-Her; Houng, Mau Phon; Chang, Sou Jinn; Su, Yan Kuin

doi:10.1049/el:20020543

Cited by 15 publications

(3 citation statements)

References 8 publications

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“…However, conventional GaN-based HEMTs with a Schottky gate suffer from high leakage current and the current collapse effect, which degrade the device performance and reliability. Inserting dielectric layers underneath the metal gate can effectively reduce the gate leakage current [ 4 , 5 ], suppress current collapse phenomenon [ 6 , 7 ], provide better linearity of RF output power [ 8 , 9 ], and lower flicker noise [ 10 , 11 ]. As the size of the device shrinks, the thickness of the gate dielectric shrinks, resulting in leakage current or related reliability issues.…”

Section: Introductionmentioning

confidence: 99%

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

et al. 2022

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A metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT) is proposed based on using a Al2O3/ZrO2 stacked layer on conventional AlGaN/GaN HEMT to suppress the gate leakage current, decrease flicker noise, increase high-frequency performance, improve power performance, and enhance the stability after thermal stress or time stress. The MOS-HEMT has a maximum drain current density of 847 mA/mm and peak transconductance of 181 mS/mm. The corresponding subthreshold swing and on/off ratio are 95 mV/dec and 3.3 × 107. The gate leakage current can be reduced by three orders of magnitude due to the Al2O3/ZrO2 stacked layer, which also contributes to the lower flicker noise. The temperature-dependent degradation of drain current density is 26%, which is smaller than the 47% of reference HEMT. The variation of subthreshold characteristics caused by thermal or time stress is smaller than that of the reference case, showing the proposed Al2O3/ZrO2 stacked gate dielectrics are reliable for device applications.

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Section: Introductionmentioning

confidence: 99%

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

et al. 2022

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“…In addition to wet surface treatment, inserting a dielectric layer or stack structure under the metal gate can effectively suppress I G , improve current collapse, and provide better linearity [16]. Various dielectric materials, e.g., AlN [17], SiO 2 [18], MgCaO [19], HfO 2 [20], Al 2 O 3 [21], HfAlO X [22], ZrO 2 [23], and TiO 2 [24], have been extensively investigated.…”

Section: Introductionmentioning

confidence: 99%

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

et al. 2022

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We demonstrated the performance of an Al2O3/SiO2 stack layer AlGaN/GaN metal–oxide semiconductor (MOS) high-electron-mobility transistor (HEMT) combined with a dual surface treatment that used tetramethylammonium hydroxide (TMAH) and hydrochloric acid (HCl) with post-gate annealing (PGA) modulation at 400 °C for 10 min. A remarkable reduction in the reverse gate leakage current (IG) up to 1.5×10−12 A/mm (@ VG = −12 V) was observed in the stack layer MOS-HEMT due to the combined treatment. The performance of the dual surface-treated MOS–HEMT was significantly improved, particularly in terms of hysteresis, gate leakage, and subthreshold characteristics, with optimized gate annealing treatment. In addition, an organized gate leakage conduction mechanism in the AlGaN/GaN MOS–HEMT with the Al2O3/SiO2 stack gate dielectric layer was investigated before and after gate annealing treatment and compared with the conventional Schottky gate. The conduction mechanism in the reverse gate bias was Poole–Frankel emission for the Schottky-gate HEMT and the MOS–HEMT before annealing. The dominant conduction mechanism was ohmic/Poole-Frankel at low/medium forward bias. Meanwhile, gate leakage was governed by the hopping conduction mechanism in the MOS–HEMT without gate annealing modulation at a higher forward bias. After post-gate annealing (PGA) treatment, however, the leakage conduction mechanism was dominated by trap-assisted tunneling at the low to medium forward bias region and by Fowler–Nordheim tunneling at the higher forward bias region. Moreover, a decent product of maximum oscillation frequency and gate length (fmax × LG) was found to reach 27.16 GHz∙µm for the stack layer MOS–HEMT with PGA modulation. The dual surface-treated Al2O3/SiO2 stack layer MOS–HEMT with PGA modulation exhibited decent performance with an IDMAX of 720 mA/mm, a peak extrinsic transconductance (GMMAX) of 120 mS/mm, a threshold voltage (VTH) of −4.8 V, a higher ION/IOFF ratio of approximately 1.2×109, a subthreshold swing of 82 mV/dec, and a cutoff frequency(ft)/maximum frequency of (fmax) of 7.5/13.58 GHz.

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“…Other groups have since followed suit and different gate dielectrics were used, such as Si 3 N 4 , 5 Gd 2 O 3 , 6 and liquid-phase-deposited oxide. 7 Much work in this field was primarily focused on achieving a reliable insulator with low interface-defect density. However, little has been reported on the behavior of the breakdown voltage and the effect of current collapse in these devices.…”

Section: Introductionmentioning

confidence: 99%

Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

Tan

Houston

Hill

et al. 2003

Journal of Elec Materi

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The electrical performance of AlGaN/GaN metal-insulator semiconductor, heterostructure field-effect transistors (MISHFETs) were studied and compared to passivated and unpassivated HFETs. Record MISHFET current densities up to 1,010 mA/mm were achieved, and the devices exhibited stable operation at elevated temperatures up to 200°C. Higher maximum-drain current, breakdown voltage, and a lower gate-leakage current were obtained in the MISHFETs compared to unpassivated HFETs. The breakdown voltage of these devices exhibited a negative temperature coefficient of 0.14 VK Ϫ1 , suggesting that a mechanism other than impact ionization may be responsible. Different structures of MIS diodes also reveal that the high-field region at the gate edge dominates the breakdown mechanism of these devices. Gate-pulse measurements indicate the presence of current collapse in the MISHFETs, despite the expected passivation effect of the insulator. However, a striking feature observed was the mitigation of these effects upon annealing the devices at 385°C for 5 min under N 2 ambient.

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GaN MOSFET with liquid phase deposited oxide gate

Cited by 15 publications

References 8 publications

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

Improved Electrical Characteristics of AlGaN/GaN High-Electron-Mobility Transistor with Al2O3/ZrO2 Stacked Gate Dielectrics

Remarkable Reduction in IG with an Explicit Investigation of the Leakage Conduction Mechanisms in a Dual Surface-Modified Al2O3/SiO2 Stack Layer AlGaN/GaN MOS-HEMT

Electrical characteristics of AlGaN/GaN metal-insulator semiconductor heterostructure field-effect transistors on sapphire substrates

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