GaN MMIC Power Amplifiers for S-band and X-band

Suijker, E.M.; Sudow, M.; Fagerlind, Martin; Rorsman, Niklas; Hek, A.P. de; Vliet, F.E. van

doi:10.1109/eumc.2008.4751447

Cited by 10 publications

(4 citation statements)

References 4 publications

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“…18 confirms that the first inductor implementation has Lai = 2.5nH, as required, and self-resonates well beyond 6 GHz. In addition, its maximum Q is 4.5.1 st section drain TL inductance (nH)…”

supporting

confidence: 62%

A highly efficient, linear and broadband GaN MMIC power amplifier

Zhou¹

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confidence: 62%

A highly efficient, linear and broadband GaN MMIC power amplifier

Zhou¹

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“…The gallium-nitride high electron mobility transistor (GaN-HEMT) has been widely used for satellite communication systems and various military applications especially in the X-band [1][2][3]. Power amplifiers (PAs) based on GaN-HEMTs have high output power and high efficiency at high-frequency bands because of the relatively wide energy bandgap, high power density, and high electron mobility of the transistors [4].…”

Section: Introductionmentioning

confidence: 99%

X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs

Lee¹,

Lee²,

Kang³

et al. 2017

IET Microwaves, Antennas & Propagation

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This study presents an X‐band two‐stage Doherty power amplifier (DPA) using pre‐matched gallium‐nitride high electron mobility transistors (GaN‐HEMTs). The pre‐matched GaN‐HEMT includes partial matching circuits in the package using bond‐wires and capacitors. To obtain broad bandwidth and low loss, the pre‐matching circuits were carefully designed to have a low matching quality factor. The optimum second harmonic impedance, which was extracted from the harmonic source/load pull simulations, was applied to the pre‐matching circuits for high efficiency. Using the pre‐matched GaN‐HEMTs, an X‐band two‐stage power amplifier (PA) was designed and implemented. By combining two two‐stage PAs in parallel, a DPA was built. The implemented DPA exhibited a max gain of 25.5 dB and an output power from 42.5 to 45.8 dBm at the frequency band from 7.9 to 8.4 GHz. It also showed a high efficiency of 37.8% at the 6 dB back‐off output power level of 39.6 dBm.

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“…In the last few years, various GaN MMIC power amplifiers have been reported (e.g. [4][5][6][9][10][11][12]). While among the first presented X-band GaN MMIC PAs both coplanar and microstrip variants exist [4,5], almost all PAs published later were designed in microstrip and all current state-of-the-art X-band MMIC PAs are microstrip versions [10,13].…”

Section: Introductionmentioning

confidence: 99%

Potential of Coplanar X-band GaN-MMIC Power Amplifiers

et al. 2014

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While the vast majority of GaN X-band PAs is realized as microstrip circuits, this paper reports design, fabrication and measurement of a coplanar version. The amplifier is processed using the FBH 4-inch GaN-on-SiC technology with 0.25 µm-gate GaN HEMTs. The two-stage power amplifier circuit delivers more than 12 W cw output power at 10 GHz, with a large-signal gain of 20 dB and a final stage drain efficiency of 45%. Benchmarking shows that these are best-in-class values for a coplanar X-band MMIC, which come very close to the state-of-the-art microstrip counterparts.

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GaN MMIC Power Amplifiers for S-band and X-band

Cited by 10 publications

References 4 publications

A highly efficient, linear and broadband GaN MMIC power amplifier

A highly efficient, linear and broadband GaN MMIC power amplifier

X‐band two‐stage Doherty power amplifier based on pre‐matched GaN‐HEMTs

Potential of Coplanar X-band GaN-MMIC Power Amplifiers

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