GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

Su, Yan–Kuin; Chang, Shoou Jinn; Chen, Chang-Hsiao; Chen, J.F.; Chi, Gou–Chung; Sheu, Jinn-Kong; Lai, Wei Chih; Tsai, J.M.

doi:10.1109/jsen.2002.802240

Cited by 103 publications

(37 citation statements)

References 18 publications

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“…The samples used in this study were all grown on Si (111) substrates in a vertical metalorganic chemical vapor deposition system [13][14][15][16]. In this system, we used trimethylaluminum (TMAl), trimethylgallium (TMGa), trimethylindium (TMIn) and ammonia (NH 3 ) as aluminum, gallium, indium and nitrogen sources, respectively.…”

Section: Methodsmentioning

confidence: 99%

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Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Chang

Chiou

et al. 2009

Journal of Crystal Growth

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Section: Methodsmentioning

confidence: 99%

“…These materials are also capable of detecting ultraviolet (UV) light [12][13][14][15][16]. It is known that UV radiation is hazard to human body.…”

Section: Introductionmentioning

confidence: 99%

Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Chang

Chiou

et al. 2009

Journal of Crystal Growth

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“…sapphire (Al 2 O 3 ) (0001) substrates in an Emcore reactor. [7][8][9][10][11][12][13][14][15][16] The LED structure consists of a 50-nm-thick, GaN-nucleation layer grown at 560°C; a 3-m-thick, Si-doped, n-GaN buffer layer grown at 1,050°C; an unintentionally doped, InGaN/GaN MQW active region grown at 770°C; a 50-nm-thick, Mg-doped, p-Al 0.15 Ga 0.85 N electron-blocking layer grown at 1,050°C; and a 0.25-m-thick, Mg-doped, p-GaN contact layer also grown at 1,050°C. The InGaN/GaN MQW active region consists of five periods of 3-nm-thick, In 0.2 Ga 0.8 N-well layers and 10-nm-thick, GaN-barrier layers.…”

Section: Methodsmentioning

confidence: 99%

InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

Hsu

Chang

et al. 2003

Journal of Elec Materi

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Nitride-based light-emitting diodes (LEDs) with a reflector at the backside of the sapphire substrates have been demonstrated. It was found that an SiO 2 /TiO 2 distributed-Bragg reflector (DBR) structure could reflect more downward-emitting photons than an Al-mirror layer. It was also found that the 20-mA output power was 2.76 mW, 2.65 mW, and 2.45 mW for the DBR LED, Al-reflector LED, and conventional LED, respectively. With the same 50-mA current injection, the integrated-electroluminescence (EL) intensity of a DBR LED and an Al-reflector LED was 19% and 15% larger than that observed from a conventional LED. INTRODUCTIONThe III-V nitrides have some unique properties, such as wide direct bandgap, high-thermal conductivity, and chemical stability. These properties have made III-V nitrides attractive in recent years. At room temperature, the bandgap energy of AlInGaN varies from 1.95 eV to 6.2 eV, depending on its composition. Therefore, III-V nitride semiconductors are particularly useful for light-emitting devices in the short wavelength region. 1-4 In fact, III-V nitridebased blue and green light-emitting diodes (LEDs) with an InGaN/GaN multiquantum-well (MQW) active region are now commercially available. These nitride-based blue and green LEDs could be used in versatile applications, such as full-color displays, full-color indicators, and traffic lights. The other potential application for nitride-based LEDs is lighting. Currently, light bulbs and fluorescent tubes are the most commonly used light sources in our daily life. However, these conventional light sources consume large power. The lifetime of these conventional light sources is also short. In contrast, nitride-based LEDs are much less power consuming and much more reliable. Thus, much attention has been focused on generating white light with nitride-based LEDs. Although it has been shown that we could combine nitride-based, blue-LED chips with yellow phosphors to generate white light, the output power of the nitride-based, white-LED lamps is still low. In other words, we need to further improve the output intensity of nitride-based, blue-LED chips before we can realize feasible nitride-based, white-LED lamps.Unlike laser diodes, photons generated from LED chips could be emitted in any direction. As a result, a large portion of photons emitted from a LED chip could be lost, particularly for those photons being emitted downward to the substrate. Thus, if we could effectively reflect those photons emitted downward, we should be able to enhance the LED-output intensity significantly. Because nitride-based LED structures are normally grown on transparent-sapphire substrates, we should be able to reflect downwardemitting photons by depositing an Al-mirror layer or a distributed-Bragg reflector (DBR) structure at the backside of the sapphire substrates. A highly reflective DBR mirror is formed from a repeated periodic stack of alternating high and low index quarterwavelength layers. To increase the reflectivity of a DBR structure, we need to precisely contr...

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“…Therefore, the gallium nitride-based semiconductors have attracted much attention on light emitting devices (LED) Nakamura et al (1995), laser diodes Nakamura et al (1996), ultraviolet photodetector Su et al (2002) and high power and high-electron-mobility-transistors (HEMTs) Park and Bayram (2016), Wu and Alamo (2016), Wang et al (2012) over twenty years.…”

Section: Introductionmentioning

confidence: 99%

Performance of back-illuminated $$\hbox {In}_{0.09}\hbox {Ga}_{0.91}\hbox {N}$$ In 0.09 Ga

Huang

Wang

et al. 2017

Opt Quant Electron

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In this paper, the back-illuminated In 0:09 Ga 0:91 N p-i-n ultraviolet photodetectors have been fabricated and simulated. The responsivity characteristic was shown experimentally and theoretically. The peak responsivity of photodetector was improved from 0.06 A/W at 394 nm to 0.19 A/W at 402 nm since the growth of a 30 nm i-GaN layer between i-InGaN layer and n-GaN layer. The photodetector models and characteristics were numerical simulated and optimized by Silvaco TCAD semiconductor simulation software. The simulation results revealed that the responsivity has great relationship with the Shockley-Read-Hall recombination lifetime, intrinsic layer thickness and extinction coefficient k. In addition, the simulation results were in good agreement with the experimental results when the SRH recombination lifetime about 0.01-0.1 ns and the In composition x introduced a 0.05 increment of In 0:09 Ga 0:91 N layer.

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GaN metal-semiconductor-metal ultraviolet sensors with various contact electrodes

Cited by 103 publications

References 18 publications

Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

Low-frequency noise characteristics of GaN-based UV photodiodes with AlN/GaN buffer layers prepared on Si substrates

InGaN/GaN light-emitting diodes with a reflector at the backside of sapphire substrates

Performance of back-illuminated $$\hbox {In}_{0.09}\hbox {Ga}_{0.91}\hbox {N}$$ In 0.09 Ga

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