GaN linear electro-optic effect

Long, X.-C.; Myers, Richard A.; Brueck, S. R. J.; Ramer, Rodica; Zheng, Kui; Hersee, S.D.

doi:10.1063/1.115547

Cited by 59 publications

(35 citation statements)

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“…These theoretical values are all less than the measured values of 3.68 and 3.95 pm/V. Moreover, the measured γ 41 of the cBN crystal is also larger than the linear EO coefficients of GaN [15] , AlN [16] , GaP, and GaAs. These EO coefficients are listed and compared in Table 2.…”

Section: -2mentioning

confidence: 41%

“…AlN C6V γ13 = 0.67, γ33 = −0.59 [16] GaN C 6V γ 13 = 0.57 ± 0.11, γ 33 = 1.91 ± 0.35 [15] GaP T d γ41 = 0.97 [14] GaAs T d γ 41 = 1.6 [14] very promising EO material. In addition, the measuring method of the linear EO coefficient adopted in this letter is very convenient and feasible as it is unnecessary to measure the absolute intensity of the probing beam.…”

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confidence: 99%

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Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

Wang¹,

Jia²,

Liu³

et al. 2012

中国光学快报

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The transverse electro-optic (EO) modulation system is built based on cubic boron nitride (cBN) single crystals unintentionally doped and synthesized at a high pressure and high temperature. The photoelectric output of the system includes two parts that can be measured respectively and the value of elements in the linear EO tensor of the cBN crystal can be obtained. This method does not need to measure the absolute light intensity. All of the surfaces of the tiny cBN crystals whose hardness is next to the hardest diamonds are {111} planes. The rectangular parallelepiped cBN samples are obtained by cleaving along {110} planes and subsequently grinding and polishing {112} planes of the tiny octahedral cBN flakes. Three identical non-zero elements of the EO tensor of the cBN crystal are measured via two sample configurations, and the measured results are very close, about 3.68 and 3.95 pm/V, respectively, which are larger than the linear EO coefficients of the general III-V compounds.OCIS codes: 160.2100, 160.4760, 190.4400, 190.4720. doi: 10.3788/COL201210.041602. Cubic boron nitride (cBN) has a zinc blend structure and belongs to the T d point group; thus, it possesses the linear electro-optic (EO) effect. Its EO tensor possesses only three identical non-zero elements, namely, γ 41 = γ 52 = γ 63 . The bandgap of cBN is about 6.3 eV [1−3] , which is the widest among the III-V compounds. Therefore, cBN is transparent in throughout the visible range and most of the infrared and ultraviolet spectra; it can also operate in the wide spectral range as the EO material. Furthermore, cBN has a very high laser damage threshold, meaning it can withstand high-power pulsed or continuous-wave (CW) laser beams. Thus, cBN has potential EO applications. The determination of the EO coefficients of cBN crystals is a prerequisite not only for the EO applications, but also for other studies (e.g., for the study of Raman efficiency of cBN [4] and for the propagation control of the surface wave generated from the interface between the cBN crystal and other isotropic medium [5] ). Some different theoretical results of the EO tensor of the cBN crystals have been reported [6−8] , but these results were only evaluated based on the secondorder non-linear susceptibility χ (2) (−2ω, ω, ω), which is related to the second harmonic generation. In fact, the linear EO coefficient γ 41 (ω) should be obtained based on χ (2) (−ω, ω, 0), which is relevant to the linear EO effect and optical rectification. Because of the frequency dispersion of the second-order non-linear susceptibility, χ (2) (−2ω, ω, ω) = χ (2) (−ω, ω, 0); that is, the accurate value of γ 41 (ω) should come from the experiments of the linear EO effect or optical rectification. Unfortunately, very few reports [9] have yet examined the experimental value of γ 41 of cBN crystals. The main obstacles may include the difficulties of synthesizing the high-quality large cBN crystals and fabricating cBN crystals into suitable rectangular parallelepiped samples because of the second highe...

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Section: -2mentioning

confidence: 41%

mentioning

confidence: 99%

Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

Wang¹,

Jia²,

Liu³

et al. 2012

中国光学快报

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“…GaN exhibits strong second-order nonlinearity [11][12][13][14], with a χ (2) coefficient of the same order as LiNbO 3 . Its outstanding electrical, thermal and optoelectronic properties have enabled a broad range of technological applications including high speed and high power electronics [15], blue/UV light emitting and laser diodes [16].…”

Section: Introductionmentioning

confidence: 99%

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

Xiong¹,

Pernice²,

Ryu³

et al. 2011

Advanced Photonics

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Abstract:We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around 1560 nm and 780 nm, we achieve efficient, tunable second harmonic generation at 780 nm. The χ (2) nonlinear susceptibility is measured to be as high as 16 ± 7 pm/V. Because GaN has a wideband transparency window covering ultraviolet, visible and infrared wavelengths, our platform provides a viable route for the on-chip generation of optical wavelengths in both the far infrared and near-UV through a combination of χ (2) enabled sum-/difference-frequency processes.

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“…which reverts to Equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17) by removing the electric field. The principle axes of the new ellipsoid do not coincide with the unperturbed axes (x, y, z).…”

Section: Electro-optic Effectmentioning

confidence: 99%

“…• Find the intersection ellipse between a plane through the origin, that is normal to the direction of propagation k r , and the index ellipsoid, Equation (3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15)(16)(17)(18)(19).…”

Section: Electro-optic Effectmentioning

confidence: 99%

AlGaN Directional Coupler Switch

Crespo¹

2002

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The public reporting burden for this collection of information is estimated to average 1 hour per response, including the time for reviewing instructions, searching existing data sources, searching existing data sources, gathering and maintaining the data needed, and completing and reviewing the collection of information. Send comments regarding this burden estimate or any other aspect of this collection of information, including suggestions for reducing this burden, SPONSORING/MONITORING AGENCY ACRONYM(S)AFRL/SNDI SPONSORING/MONITORING AGENCY NAME(S) AND ADDRESS(ES) Sensors Directorate Air Force Research Laboratory Air Force Materiel Command Wright-Patterson Air Force Base, OH 45433-7318 SPONSORING/MONITORING AGENCY REPORT NUMBER(S) AFRL-SN-WP-TR-2003-1113 DISTRIBUTION/AVAILABILITY STATEMENTApproved for public release; distribution is unlimited. SUPPLEMENTARY NOTESThis report contains color. ABSTRACT (Maximum 200 Words)The dissertation describes an attempt to develop, including material processing, a zero-gap directional coupler using the AlGaN material system in an n-i-n configuration that was grown by MBE. This work compiles the optical and electro-optical properties and models the behavior of AlGaN integrated optic waveguides. The switches are based on the zero-gap electro-optic directional coupler. The models are compared with the experimental results that were obtained. The models used were the Marcatili and the beam propagation method. Models for predicting the index of refraction of AlGaN versus AL concentration are treated. An advantage of the AlGaN integrated optic waveguides and switches is the potential to work at wavelengths from IR to the blue region. AlGaN has the potential to work at high temperatures and in harsh environments. The wavelength chosen for this work is 632.8 nm for a HeNe laser.The results show that an electro-optic switch is viable in the AlGaN system. Material maturity is necessary to improve performance. The models chosen were shown to be inaccurate by themselves. Together, they are a viable source for the development of a directional coupler surround by air.

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GaN linear electro-optic effect

Cited by 59 publications

References 1 publication

Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

Measurement of the linear electro-optic tensor of cubic boron nitride single crystals

Integrated GaN photonic circuits on silicon (100) for second harmonic generation

AlGaN Directional Coupler Switch

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