GaN High Electron Mobility Transistor Degradation: Effect of RF Stress

Abstract

Sub-micron AlGaN/GaN high electron mobility transistors were RF stressed at various drain bias conditions at 10 GHz under 3 dB and 3.7 dB compression. Rapid degradation was observed above a drain bias of 20 V, with significant degradation of the Schottky contact. Additionally, electroluminescence and cathodoluminescence was performed on stressed devices. Localization of 2.2 eV defect emission was observed on a device suffering from infant mortality.