GaN-HEMT on Si as a Robust Visible-Blind UV Detector With High Responsivity

Varghese, Arathy; Eblabla, Abdalla; Wu, Zehao; Ghozati, Seyed Urman; Elgaid, K.

doi:10.1109/jsen.2022.3170653

Cited by 5 publications

(3 citation statements)

References 26 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…[13][14][15] Studies on the fabrication of UV PDs on AlGaN/GaN HEMT structures have shown outstanding results, and the integration of these UV PDs into power electronic and on-chip systems has been accomplished seamlessly. [16][17][18] However, the large lattice and thermal mismatches between (Al)GaN and Si (17% and 54%) can lead to a high density of dislocations in the epi-structure, which degrades the crystalline quality and surface smoothness. [19,20] This can limit the photogenerated carriers in the PD devices and significantly reduce the PD performance.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Razeen,

Kotekar‐Patil,

Jiang

et al. 2024

Adv Materials Inter

View full text Add to dashboard Cite

AlGaN/GaN High Electron Mobility Transistor (HEMT) structures offer superior electrical and material properties that make them ideal for the fabrication of high‐performance Ultraviolet photodetectors (UV PDs), especially using the metal‐semiconductor‐metal (MSM) configuration. However, the metal layout of the MSM design and crystal defects in multi‐stack HEMTs can reduce photocurrent and degrade device performance. Nano‐structuring of the AlGaN/GaN surface with different nanofeatures is a promising approach to improve light absorption efficiency and increase device response. In this work, AlGaN/GaN HEMT MSM UV photodetectors with enhanced performance parameters by engineering the surface with periodic nanohole arrays are demonstrated. Optical simulations are used to optimize the design of the nanoholes' periodicity and depth. Unpatterned and nanohole‐patterned devices with varying nanohole depths are fabricated, and their performance shows substantial enhancement with the incorporation of nanoholes. The device with 40 nm deep nanoholes and 230 nm array periodicity shows the highest performance in terms of photocurrent (0.15 mA), responsivity (1.4 × 105 A W−1), UV/visible rejection ratio (≈103), and specific detectivity (4.9 × 1014 Jones). These findings present a HEMT‐compatible strategy to enhance UV photodetector performance for power optoelectronic applications, highlighting that nanohole patterning is a promising prospect for advancements in UV photodetection technology.

show abstract

Section: Introductionmentioning

confidence: 99%

Enhanced Performance of Metal‐Semiconductor‐Metal UV Photodetectors on Algan/Gan Hemt Structure via Periodic Nanohole Patterning

Razeen,

Kotekar‐Patil,

Jiang

et al. 2024

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…Despite significant research and ongoing development on GaN UV PDs, many of the devices produced to date require an external power supply to operate [89], [90], [163], [164], [165], [166]. This reduces the yield of using UV PD devices in future electronic systems for internet of things (IoT), portable, and wearable sensors.…”

Section: Introductionmentioning

confidence: 99%

“…As previously described (Chapter 2, section 2.1), AlGaN/GaN HEMTs offer a range of attractive properties that allow for the fabrication of UV PD devices with high spectral response and operation stability. Studies on the production of UV PDs on AlGaN/GaN HEMTs have produced outstanding results and the integration of these UV PDs into power electronic and on-chip systems has been accomplished seamlessly [89], [90], [161], [163], [166], [185], [186].…”

Section: Introductionmentioning

confidence: 99%