GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying

Kurumatani, Hiroki; Katsura, Seiichiro

doi:10.1109/isie.2017.8001548

Cited by 5 publications

(4 citation statements)

References 13 publications

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“…As denoted in (43), more suppression of the estimation error requires increasing of the switching frequency or expanding the level of the inverter as discussed in the section 3. Note that excessive increase of switching frequency should be avoided since it causes extra noises due to voltage clamp in a deadtime or reverse-recovery of diodes (15) (16) .…”

Section: Numerical Simulationmentioning

confidence: 99%

State Estimation Based on Multirate Kalman Filter for Power Systems Driven by Switching Inverter

Kurumatani

Katsura

2019

IEEJ Journal IA

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This paper presents a design methodology of a Kalman filter for a multirate control system with a fast input system. There are many applications whose sensory system is slower than the input system in a power system. The sensory system is required to perform fast sensing while ensuring a low signal-to-noise ratio, although it requires additional time compared with that of a low-resolution converter. The Kalman filter is an effective tool in such a situation and it estimates parameters while eliminating noise. Because the optimality of this filter is ensured when the system model and noise variance on the system are well identified, rigorous discretization should be considered on the multirate control system. With this in mind, the paper presents the design method of a multirate Kalman filter as is the case for a single-rate controller. Further, the noise variance and oversampling ratio of the multirate controller is confirmed using the Monte Carlo method. Numerical simulation of a voltage inverter theoretically validates the design methodology.

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Section: Numerical Simulationmentioning

confidence: 99%

State Estimation Based on Multirate Kalman Filter for Power Systems Driven by Switching Inverter

Kurumatani

Katsura

2019

IEEJ Journal IA

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“…Different types of switches are utilized in the power electronics converters [5][6][7][8]. The conventional Insulated Gate Bipolar Transistors (IGBTs) are gradually going out of use in industrial circuits of WPT systems due to their low switching capability [9].…”

Section: Introductionmentioning

confidence: 99%

“…It is well known that the use of wideband gap semiconductors (such as GaN-transistors) instead of classical Si power switches can significantly reduce the power losses that lead to the increasing of the system efficiency or significantly increase switching frequency reducing size of passive elements [11][12][13]. It is advisable to use GaN transistors for T-type topologies [5][6][7][8]14]. The GaN features fast switching, low parasitic charges, reverse conductivity with zero recovery charge and low driving power losses and dynamic losses; compared to Si-IGBTs and SiC-MOSFETs [5,6,[15][16][17][18], higher efficiency, low parasitic output capacitance [16][17][18] can be achieved.…”

Section: Introductionmentioning

confidence: 99%

Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter

et al. 2020

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A promising solution for inductive power transfer and wireless charging is presented on the basis of a single-phase three-level T-type Neutral Point Clamped GaN-based inverter with two coupled transmitting coils. The article focuses on the feasibility study of GaN transistor application in the wireless power transfer system based on the T-type inverter on the primary side. An analysis of power losses in the main components of the system is performed: semiconductors and magnetic elements. System modeling was performed using Power Electronics Simulation Software (PSIM). It is shown that the main losses of the system are static losses in the filter inductor and rectifier diodes on the secondary side, while GaN transistors can be successfully used for the wireless power transfer system. The main features of the Printed Circuit Board (PCB) design of GaN transistors are considered in advance.

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“…Apart from this argument, the filtering effort is significant in a 2L inverter, especially in high‐frequency applications where the output filter is mandatory. There have been some efforts in the academia to design a 3L SiC inverter but predominantly with the T‐type structure, as shown in [7]. All SiC is a practical approach, but it does not eliminate the inherent drawback of SiC technology at higher frequencies.…”

Section: Introductionmentioning

confidence: 99%

Three‐level GaN inverter with SiC diodes for a possible three‐phase high power solution

Vega

Mukherjee²,

Carter

et al. 2019

J. eng.

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GaN-HEMT-based three level T-type NPC inverter using reverse-conducting mode in rectifying

Cited by 5 publications

References 13 publications

State Estimation Based on Multirate Kalman Filter for Power Systems Driven by Switching Inverter

State Estimation Based on Multirate Kalman Filter for Power Systems Driven by Switching Inverter

Feasibility Study GaN Transistors Application in the Novel Split-Coils Inductive Power Transfer System with T-Type Inverter

Three‐level GaN inverter with SiC diodes for a possible three‐phase high power solution

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