2014
DOI: 10.1007/978-3-319-03002-9_17
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GaN HEMT Based S-Band Power Amplifier

Abstract: Abstract-In this paper, Gallium Nitride (GaN) High ElectronMobility Transistor (HEMT) based S-band power amplifier design, simulation, fabrication, assembly and RF testing have been discussed. This power amplifier is capable of giving an output power ~ 8 watts in 3.3-3.5 GHz frequency range with a PAE greater than 90%.

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