GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Cordier, Y.; Damilano, B.; Aing, Phannara; Chaix, C.; Linez, Florence; Tuomisto, Filip; Vennéguès, P.; Frayssinet, Éric; Lefebvre, Denis; Portail, Marc; Némoz, M.

doi:10.1016/j.jcrysgro.2015.10.017

Cited by 7 publications

(8 citation statements)

References 22 publications

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“…We have confirmed that a superior-quality crystal can be grown even with a high growth rate by accurately designing the HDRS. In fact, it was proved by Cordier et al [14] and Chen et al [15] Crystal Quality of InGaN Epitaxial Layers with CRS and HDRS: As shown in Figure 10 and 11, the X-ray rocking curve full-width at half-maximum (XRC-FWHM) of the MBEgrown In 1Àx Ga x N layer is broadened with a higher InN molar fraction. Contrarily, when the HDRS is used, the XRC-FWHM converges to a constant value, which means that deterioration of film quality has not been observed in the case of the HDRS.…”

Section: Crystal Quality Of Nitrides Grown By Hdrsmentioning

confidence: 86%

“…The Nagoya University research group (the group of Prof. Amano) could achieve a growth rate as high as 2.5 μm h À1 by using the HDRS in MBE as shown in Figure 8. [22] Cordier et al [14] have used an HDRS and examined the GaN growth rate as a function of the nitrogen flow rate.…”

Section: High Growth Rate Of Ganmentioning

confidence: 99%

“…[56] Figure 21. RF plasma power dependence of XRC-FWHM of GaN (0002) out-plane and GaN (11)(12)(13)(14)(15)(16)(17)(18)(19)(20) in-plane X-ray diffraction (XRD) for the homoepitaxial growth of GaN on GaN bulk substrates. [65] Figure 22.…”

Section: N 2 /H 2 Gas Ratiomentioning

confidence: 99%

“…Therefore, we have developed a novel radical source that is based on ICP and capacitively coupled plasma (CCP) [7][8][9][10][11][12][13] to increase the density of atomic nitrogen radicals for increasing the growth rate. Using this novel high-density radical source (HDRS), it was proved that high-quality GaN and InGaN epitaxial layers can be grown with a higher growth rate [14,15] than conventional radical sources (CRSs).…”

Section: Introductionmentioning

confidence: 99%

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Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Oda

Hori

2020

Physica Status Solidi (a)

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For the production of nitride‐based optical and power devices, it is known that metal organics chemical vapor deposition (MOCVD) is an industrial method which is used worldwide. However, MOCVD has disadvantages: 1) a lot of ammonia gas is consumed; 2) the sublimation of GaN is not negligible at growth temperature and these increase the production cost; 3) the growth of in‐containing nitrides is difficult because the growth temperature is too high; and 4) using large Si substrates of 150–300 mm diameter for industrial production, wafer breakage and bowing occur. It is therefore important to develop novel epitaxial growth methods that can replace the MOCVD method. Recently, high‐density radical source (HDRS) is developed by combining inductively coupled plasma (ICP) and capacitively coupled plasma (CCP) which can be applied to molecular beam epitaxy (MBE) in order to increase the growth rate of nitrides. Another novel method, the radical enhanced MOCVD (REMOCVD) method with using very high frequency (VHF) plasma, has also been developed. This REMOCVD allows the low growth temperature without using any ammonia gas. These novel methods are promising for replacing the MOCVD method from the viewpoint of production cost without ammonia gas usage.

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Section: Crystal Quality Of Nitrides Grown By Hdrsmentioning

confidence: 86%

Section: High Growth Rate Of Ganmentioning

confidence: 99%

Section: N 2 /H 2 Gas Ratiomentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Oda

Hori

2020

Physica Status Solidi (a)

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“…Our previous experiments on PA-MBE of hBN layers used a standard nitrogen Veeco radio-frequency (RF) plasma source, and nitrogen flow rates of up to two standard cubic centimetres per minute (sccm), to produce a flux of active nitrogen [ 22 , 26 , 28 ]. Recently, there have been active efforts from the main MBE companies to increase the efficiency of their nitrogen RF plasma sources and to achieve higher MBE growth rates for AlGaInN-based alloys [ 33 , 34 , 35 , 36 , 37 ]. The latest model of the Riber RF plasma source produced growth rates for GaN layers up to 7.6 µm/h using nitrogen flow rates of 25 sccm [ 34 ].…”

Section: Introductionmentioning

confidence: 99%

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

et al. 2018

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Hexagonal boron nitride (hBN) has attracted a great deal of attention as a key component in van der Waals (vdW) heterostructures, and as a wide band gap material for deep-ultraviolet devices. We have recently demonstrated plasma-assisted molecular beam epitaxy (PA-MBE) of hBN layers on substrates of highly oriented pyrolytic graphite at high substrate temperatures of ~1400 °C. The current paper will present data on the high-temperature PA-MBE growth of hBN layers using a high-efficiency radio-frequency (RF) nitrogen plasma source. Despite more than a three-fold increase in nitrogen flux with this new source, we saw no significant increase in the growth rates of the hBN layers, indicating that the growth rate of hBN layers is controlled by the boron arrival rate. The hBN thickness increases to 90 nm with decrease in the growth temperature to 1080 °C. However, the decrease in the MBE temperature led to a deterioration in the optical properties of the hBN. The optical absorption data indicates that an increase in the active nitrogen flux during the PA-MBE process improves the optical properties of hBN and suppresses defect related optical absorption in the energy range 5.0–5.5 eV.

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Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources

Новиков

Foxon

2017

Journal of Crystal Growth

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GaN films and GaN/AlGaN quantum wells grown by plasma assisted molecular beam epitaxy using a high density radical source

Cited by 7 publications

References 22 publications

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

Novel Epitaxy for Nitride Semiconductors Using Plasma Technology

High-Temperature Molecular Beam Epitaxy of Hexagonal Boron Nitride with High Active Nitrogen Fluxes

Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources

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