GaN field emitter array diode with integrated anode

Abstract

Articles you may be interested inFabrication and characteristics of lateral type GaN field-emission arrays using metalorganic chemical vapor deposition J.GaN field emission pyramids are grown by self-limiting, selective-area metalorganic chemical vapor deposition. The self-limitation provides the potential of high uniformity of the pyramids and the selective-area growth allows one to define regular arrays of GaN pyramids for field emitter arrays ͑FEAs͒. Fabrication of an integrated anode lowered the operating voltage of the FEAs by narrowing the anode-cathode distance compared to devices with an external anode. A maximum emission current of 0.15 A/tip has been observed for voltages of 570 V with an emitter-anode separation of 2 m.

Oriented Bicrystalline GaN Nanowire Arrays suitable for Field Emission Applications

“…The present self-assembly approach is simpler and cheaper than the previously reported methods for fabricating the microscale GaN pyramids. [36,37] However, further study is necessary on controlled growth of the GaN nanowire arrays.…”

Synthesis, photoluminescence and field emission properties of well aligned/well patterned conical shape GaN nanorods

“…Among these structures, one-dimensional (1D) GaN structures are considered as crucial building blocks having great prospects for nanoscale electronic and optoelectronic devices due to their unique properties associated with their highly anisotropic geometry, volume to surface ratio, quantum confinement effect, and size confinement which are very supportive to FE due to a high aspect ratio. [18][19][20][21] One-dimensional (1D) GaN nanostructures are under extensive research focus due to their unique properties as well as potential applications in fabricating novel nano-devices such as Field Emitters, 22,23 light-emitting diodes (LEDs), 24 high power microwave tubes, 25 lasers, 26,27 solar cells, 28 detectors, 29 logic gates 21 and in sensor technologies. 30 For the device fabrication and application in the future, synthesis of one-dimensional well-ordered and well-aligned nanostructures with high density is very important due to their excellent field emission properties.…”

Spontaneous and piezoelectric polarization effects in III–V nitride heterostructures

“…III-V nitride heterostructures are of outstanding current interest for a wide range of device applications, including blue and ultraviolet light-emitting diodes and lasers, 1 hightemperature/high-power electronics, [2][3][4][5][6] visible-blind ultraviolet photodetectors, 7,8 and field-emitter structures. 9,10 In addition, these materials, by virtue of their wurtzite crystal structure and high degree of ionicity, exhibit a variety of material properties that either are not found or are of considerably reduced importance in conventional zincblende III-V semiconductors. Of particular interest are piezoelectric and spontaneous polarization effects, which recent experimental and theoretical investigations have revealed to be of great importance in the design and analysis of nitride heterostructure devices, [11][12][13][14] and which can be exploited to advantage in nitride materials and device engineering.…”