Abstract:We have investigated in detail dependence of annealing GaN buffer layer and GaN growth processes on a sapphire substrate at a high temperature of 1000 degree C. The GaN layers are grown by NH 3 gas source molecular beam epitaxy. The behavior of GaN buffer and epitaxial layer has been observed by in-situ reflection high-energy electron diffraction and the surface morphologies of as-grown and chemically etched GaN layers by atomic force microscopy. It is found that there is distinct difference in the surface mor… Show more
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