GaN doped with beryllium—An effective light converter for white light emitting diodes

Abstract

So far, most of the studies on GaN doped with beryllium have mainly concentrated on possible p-type doping. Unfortunately, realization of p-type conductivity in such a way appeared to be very difficult. It seems, however, that bulk crystals doped with beryllium can be used as white light converters in the monolithic white light emitting diodes. To realize monolithic white light emitting diode, we used blue light emitting diodes and a single GaN:Be crystal as converter. High value of the Color Rendering Index gives hope for obtaining an effective light converter based on gallium nitride doped with beryllium.

A Deep Carbon‐Related Acceptor Identified through Photo‐Induced Electron Paramagnetic Resonance

“…Successful implementation of GaN substrates in device operation requires that the electrical and optical properties be reliably controlled through routine incorporation of defects during the crystal growth. Heavily n‐type materials may be achieved with Si‐doping, and a variety of impurities have been shown to create semi‐insulating GaN . Commercially, Fe is commonly used to grow the resistive substrates necessary for high‐power devices.…”

Amphoteric Be in GaN: Experimental Evidence for Switching between Substitutional and Interstitial Lattice Sites

“…Figure 4 shows the average positron lifetime measured as a function of temperature in two different crystals. One is a high-oxygen (∼10 20 cm −3 ) crystal already studied earlier [31], and the other is a state-of-the-art low-oxygen (∼10 19 cm −3 ) crystal [7]. The figure also shows the data from a highly Mg-doped ammonothermally grown GaN crystal that provides the values characterizing the GaN lattice [32].…”

“…Interest in Be as a dopant in GaN has recently reemerged thanks to the appearance of encouraging reports from experimental activities [5][6][7][8][9] and novel predictions with improved theoretical methods [10]. While p-type GaN may not be achieved with Be doping, semi-insulating material is highly desirable for manufacturing high-electron-mobility transistors, for example.…”

“…While p-type GaN may not be achieved with Be doping, semi-insulating material is highly desirable for manufacturing high-electron-mobility transistors, for example. The dominant lattice locations and related optical signatures [7,9], particularly selfcompensation through the balance between substitutional and interstitial positions [10], need to be understood in detail for efficient use of Be in GaN-based devices.…”

“…The crystallization processes of the HNPS bulk crystals are described in Refs. [7,17]. Be concentrations were determined by secondary ion mass spectrometry.…”