GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Kodama, Masahito; Sugimoto, M.; Hayashi, Eiko; Soejima, Narumasa; Ishiguro, Osamu; Kanechika, Masakazu; Itoh, Kenji; Ueda, Hiroyuki; Uesugi, Tsutomu; Kachi, Tetsu

doi:10.1143/apex.1.021104

Cited by 234 publications

(148 citation statements)

References 6 publications

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“…In these cases, it was expected that the insulated gate on the dry-etched p-GaN surface could realize device operation with an inverted channel. However, the V TH was much lower than the expected value calculated using the Mg doping density and the gate capacitance, 5 GaN or homo-epitaxial GaN with low dislocation densities. [15][16][17] In this letter, accordingly, we report on fabrication and characterization of Al 2 O 3 /n-GaN structures using homoepitaxial GaN layers grown on a GaN substrate with a relatively low dislocation density, particularly focusing on interface state densities and the stability of capacitancevoltage (C-V) behavior.…”

Section: à2mentioning

confidence: 59%

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Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Kaneki

Ohira

Toiya

et al. 2016

Applied Physics Letters

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Interface characterization was carried out on Al2O3/GaN structures using epitaxial n-GaN layers grown on free-standing GaN substrates with relatively low dislocation density (<3 x 10(6) cm(-2)). The Al2O3 layer was prepared by atomic layer deposition. The as-deposited metal-oxide-semiconductor (MOS) sample showed a significant frequency dispersion and a bump-like feature in capacitance-voltage (C-V) curves at reverse bias, showing high-density interface states in the range of 10(12) cm(-1) eV(-1). On the other hand, excellent C-V characteristics with negligible frequency dispersion were observed from the MOS sample after annealing under a reverse bias at 300 degrees C in air for 3 h. The reverse-bias-annealed sample showed state densities less than 1 x 10(11) cm(-1) eV(-1) and small shifts of flat-band voltage. In addition, the C-V curve measured at 200 degrees C remained essentially similar compared with the room-temperature C-V curves. These results indicate that the present process realizes a stable Al2O3/GaN interface with low interface state densities

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Section: à2mentioning

confidence: 59%

“…Kodama et al 5 successfully fabricated a trench-type GaN field-effect transistor (FET) with a SiN gate. For the trench structure, they used a combination of dry etching and subsequent wet etching with tetramethylammonium hydroxide.…”

Section: à2mentioning

confidence: 99%

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Kaneki

Ohira

Toiya

et al. 2016

Applied Physics Letters

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“…The lower µch is likely due to the typically larger defect density of GaN on silicon compared to that on bulk GaN substrates. In addition, µch can be enhanced by improving the sidewall smoothness with an optimized TMAH treatment process [29], [30].…”

Section: Resultsmentioning

confidence: 99%

“…The sample was then treated with a 5% Tetra Methyl Ammonium Hydroxide (TMAH) solution at 85°C for 60 minutes. The TMAH wet etch was found effective in removing the damages from dry-etched GaN sidewalls [29], [30]. To activate the buried p-type GaN, a rapid thermal annealing (RTA) was performed at 850°C for 20 min in a N2 ambient.…”

Section: Gan-on-si Quasi-vertical Power Mosfetsmentioning

confidence: 99%

“…The trench width was 4.0 μm and 5.5 μm at the bottom and the top, respectively. The angle of the trench sidewall can be improved with optimized dry etching conditions and further smoothened with longer TMAH treatment [29]- [31]. The small kink observed at the middle of the sidewall might be due to erosion of the SiO2 hard mask edge during dry etching [30].…”

Section: Gan-on-si Quasi-vertical Power Mosfetsmentioning

confidence: 99%

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GaN-on-Si Quasi-Vertical Power MOSFETs

Liu

Khadar

Matioli

2018

IEEE Electron Device Lett.

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Abstract-We demonstrate the first GaN vertical transistor on silicon, based on a 6.7-μm-thick n-p-n heterostructure grown on 6-inch silicon substrate by metal organic chemical vapor deposition (MOCVD). The devices consist of trench-gate quasi-vertical metal-oxide-semiconductor field-effect transistors (MOSFETs) with a 4 μm-thick drift layer, exhibiting enhancement-mode (E-mode) operation with a threshold voltage of 6.3 V and an on/off ratio of over 10 8 . A high off-state breakdown voltage of 645 V along with a specific on-resistance of 6.8 mΩ•cm 2 were achieved thanks to the high-quality 4 μm-thick GaN drift layer presenting a relatively low defect density and very high electron mobility (720 cm 2 /V•s). This excellent performance represents a major step towards the realization of high-performance GaN vertical power transistors on low-cost silicon substrates.

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Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

et al. 2017

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Heteroepitaxial growth of lattice mismatched materials has advanced through the epitaxy of thin coherently strained layers, the strain sharing in virtual and nanoscale substrates, and the growth of thick films with intermediate strain-relaxed buffer layers. However, the thermal mismatch is not completely resolved in highly mismatched systems such as in GaN-on-Si. Here, geometrical effects and surface faceting to dilate thermal stresses at the surface of selectively grown epitaxial GaN layers on Si are exploited. The growth of thick (19 µm), crack-free, and pure GaN layers on Si with the lowest threading dislocation density of 1.1 × 10 cm achieved to date in GaN-on-Si is demonstrated. With these advances, the first vertical GaN metal-insulator-semiconductor field-effect transistors on Si substrates with low leakage currents and high on/off ratios paving the way for a cost-effective high power device paradigm on an Si CMOS platform are demonstrated.

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GaN-Based Trench Gate Metal Oxide Semiconductor Field-Effect Transistor Fabricated with Novel Wet Etching

Cited by 234 publications

References 6 publications

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

Highly-stable and low-state-density Al2O3/GaN interfaces using epitaxial n-GaN layers grown on free-standing GaN substrates

GaN-on-Si Quasi-Vertical Power MOSFETs

Si Complies with GaN to Overcome Thermal Mismatches for the Heteroepitaxy of Thick GaN on Si

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