GaN‐based Schottky‐type UV light‐emitting diodes and their integration for flat‐panel displays

Abstract

Schottky-type light-emitting diodes (ST-LEDs) were fabricated using GaN epilayers grown on (0001) sapphire substrates by metal-organic vapor phase epitaxy. The UV light emission (374 nm) was observed from the integrated ST-LEDs under reverse bias conditions. The integrated ST-LEDs are good candidates for the UV excitation sources of flat-panel display systems combined with red, green and blue phosphors.

Fabrication of a High‐Brightness Blue‐Light‐Emitting Diode Using a ZnO‐Nanowire Array Grown on p‐GaN Thin Film

“…[3] In recent years, with the development of metal organic chemical vapor deposition (MOCVD), gallium nitride (GaN) has become the most important building block for LEDs operating in the green to ultraviolet light range. [4][5][6][7] UV-blue LEDs using single GaN nanowires (NWs) have also been fabricated, and nanoLEDs are an active field of research. [5,8] However, GaN NWs and especially aligned NW arrays are difficult to grow.…”

Fabrication of GaN-based metal-oxide-semiconductor light-emitting diodes operating in ultraviolet spectral region

“…A horizontal nickel reactor was used. 3 Trimethylgallium and ammonia were used as precursors. The thickness of the GaN layers used for the diodes was 1 m.…”

“…Three main reasons are considered to account for the low external quantum efficiency: ͑1͒ self-absorption of the emitted light, ͑2͒ light absorption in the electrodes, and ͑3͒ limited creation of electron and hole pairs. We have already proposed a pseudoheterostructure, 3 in which the band-gap energy of part of the GaN region was decreased to small value by a thermal effect. Using this technique, we reduced the self-absorption of the emitted light in the ST-LEDs, and UV light emission was observed from their substrate side.…”

Electroluminescence from GaN–polymer heterojunction

“…The progress in gallium nitride and organic semiconductor technologies are of particular significance [1][2][3]. GaN being a direct band gap semiconductor (3.4 eV) has attracted much attention since the development of bright blue lightemitting diodes (LEDs) by Nakamura and coworkers [4][5][6][7][8][9]. These light sources typically contain a diode that emits in the blue or ultraviolet region and phosphors to down-convert the energy giving rise to white light [10].…”