GaN-based quasi-vertical Schottky barrier diodes with the sidewall field plate termination for obtaining low leakage current and high breakdown voltage

A novel 10-Watt-Level high-power microwave rectifier with an inverse Class-F harmonic network for microwave power transmission (MPT) is presented in this paper. The high-power microwave rectifier circuit comprises four sub-rectifier circuits, a 1 × 4 power divider, and a parallel-series dc synthesis network. The simple inverse Class-F harmonic control network serves dual roles: harmonic control and impedance matching. The 1 × 4 power divider increases the RF input power fourfold, reaching 40 dBm (10 W). The parallel-series dc synthesis network enhances the resistance to load variation. The high-power rectifier circuit is simulated, fabricated, and measured. The measurement results demonstrate that the rectifier circuit can reach a maximum RF input power of 10 W at 2.45 GHz, with a maximum rectifier efficiency of 61.1% and an output dc voltage of 23.9 V, which has a large application potential in MPT.

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GaN-based quasi-vertical Schottky barrier diodes with the sidewall field plate termination for obtaining low leakage current and high breakdown voltage

Cited by 2 publications

References 23 publications

Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

Ultra-low turn-on voltage quasi-vertical GaN Schottky barrier diode with homogeneous barrier height

A Novel 10-Watt-Level High-Power Microwave Rectifier with an Inverse Class-F Harmonic Network for Microwave Power Transmission

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