GaN-based quasi-vertical Schottky barrier diode hybridized with p-NiO layer to achieve 1.1 kV breakdown voltage and enhance the current spreading effect

Abstract

We report a GaN-based Schottky barrier diode with a p-NiO field ring and field plate. It shows a low turn-on voltage (V ON) of ∼0.6 V, an On-resistance (R ON) of ∼6.5 mΩ·cm2, a nearly unity ideality factor of 1.13 at V F = 0.3 V, and a high on/off current ratio of ∼1010. The breakdown voltage (BV) is increased from 300 to 1100 V, rendering a relatively high Baliga’s power figure-of-merit of ∼0.2 GW cm−2. The improved performance is attributed to the improved current spreading effect and the suppressed field crowding effect via the implemented p-NiO.