GaN-based multi-two-dimensional-electron-gas-channel diodes on sapphire substrates with breakdown voltage of over 3 kV

Abstract

Radiative lifetimes have been measured for 123 levels of neutral erbium using time-resolved laser-induced fluorescence on a slow beam of erbium atoms. Of the 123 levels, 56 are even parity and range in energy from 26 993 to 40 440 cm −1 and 67 are odd parity ranging from 16 070 to 38 401 cm −1 . This set of Er I lifetimes is much more extensive than others published to date, with 90 of the 123 level lifetimes measured for the first time. These lifetimes will provide the absolute calibration for a large set of measured Er I transition probabilities. Spectroscopic studies of rare earth elements including erbium are motivated by research needs in both the astrophysics and lighting communities.

Multi-channel tri-gate normally-on/off AlGaN/GaN MOSHEMTs on Si substrate with high breakdown voltage and low ON-resistance

“…Hall measurements revealed a small sheet resistance (R s ) of 230 X/sq, N s of 1.5 Â 10 13 cm À 2 , and l of 1820 cm 2 V À 1 s À 1 . A small effective resistivity (q eff ) of 2.4 mX cm was obtained, comparable to other literature results, [13][14][15][16][17][18][19] but with a small total thickness (t tot ) and higher l (Fig. 2).…”

On the super-junction formed by using field plate for lateral AlGaN/GaN-based Schottky barrier diodes

“…This value can be also further reduced by designing a multichannel AlGaN/GaN structures to introduce more conductive channels. 6,7) The breakdown voltage (BV) is directly influenced by the electric field distribution, such that the very strong local electric field at the Schottky contact region shall be avoided. 8) The electric field profile can be homogenized by using such as the gated-edge termination, [9][10][11] tri-anode configuration, 12) field plates (FPs), [13][14][15][16][17][18] floating metal rings, 19,20) p-GaN termination [21][22][23][24] and polarization-induced electric field effect.…”

Mapping of photo-electrochemical etched Ni/GaN Schottky contacts using scanning internal photoemission microscopy—comparison between n- and p-type GaN samples

“…However, GaN is a robust material and no practical wet-chemical approach is so far available in device fabrication. Therefore, reactive-ion etching and inductively coupled plasma (ICP) methods have been widely used for mesa isolation etching for p-n diodes, 1,2) lateral Schottky barrier diodes (SBDs), HEMTs, 3,4) bipolar transistors, 5,6) and laser diodes, 7,8) and the gate recess etching of AlGaN/GaN HEMTs, [9][10][11][12][13][14][15][16] Although ICP is widely used for the etching of GaN, plasma-induced damage is a serious concern in terms of device stability and reliability. [17][18][19][20][21] On the other hand, the PEC etching is a basically damage-less etching system because it is a plasma-free process.…”