GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth

Lin, Nan-Ming; Chang, Shoou‐Jinn; Shei, Shih–Chang; Lai, Wei–Chih; Yang, Yong; Lin, Wen-Chin; Lo, Hsu

doi:10.1109/jlt.2011.2162821

Cited by 9 publications

(10 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Therefore, we propose a novel optical PD localization method based on natural neighbour interpolation (NNI) and the Error Correcting Output Codes-Multilayer Perceptron-Support Vector Machine model (ECOC-MLP-SVM) applying optical simulation technology, designed to improve the detection range, accuracy and efficiency of the GIL PD localization. This method builds a GIL simulation model in Tracepro software [16] that is exactly the same as the actual GIL size and sensor layout, which can adjust according to the actual size. In the simulation model, the optical PD simulation is performed to obtain optical PD fingerprints at different locations in the GIL, in order to get over the difficulty of obtaining PD data in field experiments.…”

Section: Introductionmentioning

confidence: 99%

Method of GIL partial discharge localization based on natural neighbour interpolation and ECOC‐MLP‐SVM using optical simulation technology

et al. 2021

View full text Add to dashboard Cite

Partial discharge (PD) is one of the main causes rendering the deterioration of the insulation state in gas-insulated transmission line (GIL). Accurate and timely localization of the PD source is essential to ensure the safe and stable operation of the GIL. At present, optical PD detection technology shows advantages in terms of high sensitivity and strong anti-interference performance. Therefore, an optical PD localization method based on optical simulation fingerprint database is proposed. The introduction of simulation conquers the difficulty of obtaining a PD fingerprint database in field experiments. This method constructs a simulation fingerprint database by performing PD simulation in a GIL simulation model of the same size as the actual GIL. The natural neighbour interpolation algorithm is applied to expand the simulation fingerprint database to cover all locations in the GIL. The two-level localization method proposed is to match the PD fingerprint to be tested with the expanded fingerprint database, which can reduce the amount of calculation while maintaining the localization accuracy. The experimental results show that the average localization error of this method is only 9.7 mm, and the localization time is reduced by about 11 times compared with the normal one-level localization method. This is an open access article under the terms of the Creative Commons Attribution-NonCommercial License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited and is not used for commercial purposes.

show abstract

Section: Introductionmentioning

confidence: 99%

Method of GIL partial discharge localization based on natural neighbour interpolation and ECOC‐MLP‐SVM using optical simulation technology

et al. 2021

View full text Add to dashboard Cite

show abstract

“…In addition, the difference in refractive index between n-GaN and p-GaN caused by dopants is also neglected. 25,26 The next step is to dene the light source. We set the active layer's top and bottom planes as two planar lambertian sources and dene the output power for each planar source as 5000 arbitrary units (arb.…”

Section: Model Of Led Chipmentioning

confidence: 99%

Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes

et al. 2014

View full text Add to dashboard Cite

This work has studied the influence of the generatrix's curvature of a dome-shaped patterned sapphire substrate (PSS) on the efficacy of GaN-based light emitting diodes (LEDs). The generatrix's central angle is carefully optimized by optical simulation. It is revealed that the dome-shaped PSS with a generatrix central angle of 10 is optimal to improve the luminous efficacy of LED devices. Subsequent crystal growth and characterization of LED wafers grown on dome-shaped PSSs with different generatrix central angles indicate that the central angle will not influence the as-grown LED wafers' crystalline quality, and the optimal central angle of 10 can enhance LED efficacy by about 19%.

show abstract

“…Actually, other researchers also adopt the same approximate treatment. 25,30,31 Meanwhile, we ignore the absorption of light from LED chip.…”

Section: ■ Simulation Proceduresmentioning

confidence: 99%

“…Because the active layer (MQWs) is very thin compared with other layers, we also ignore the difference in refractive index caused by MQW structure and the indium mole fraction. Actually, other researchers also adopt the same approximate treatment. ,, Meanwhile, we ignore the absorption of light from LED chip.…”

Section: Simulation Proceduresmentioning

confidence: 99%

Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient GaN-Based LEDs

Lin

Yang

Zhou

et al. 2012

Crystal Growth & Design

View full text Add to dashboard Cite

This work represents a cost and time effective approach for pattern design of patterned sapphire substrates (PSS) for highly efficient GaN-based light emitting diodes (LEDs). Simulation is used to study how external quantum efficiency changes with the change in parameters of the unit hemisphere for LEDs fabricated on hemispherical PSS. Through a series of comparisons on simulation results, the most effective pattern to improve external quantum efficiency of LEDs on hemispherical PSS is revealed. The subsequent crystal growth of LED wafers demonstrates that both photoluminescence and electroluminescence intensities dramatically increase by about a half for LEDs grown on this pattern-optimized PSS compared to that of LEDs on non-PSS, which straight-forwardly proves the high efficiency of the optimized hemispherical patterns of PSS for improving LED efficacy.

show abstract

GaN-Based LEDs With Air Voids Prepared by One-Step MOCVD Growth

Cited by 9 publications

References 19 publications

Method of GIL partial discharge localization based on natural neighbour interpolation and ECOC‐MLP‐SVM using optical simulation technology

Method of GIL partial discharge localization based on natural neighbour interpolation and ECOC‐MLP‐SVM using optical simulation technology

Dome-shaped patterned sapphire substrate with optimized curvature to enhance the efficacy of light emitting diodes

Pattern Design of and Epitaxial Growth on Patterned Sapphire Substrates for Highly Efficient GaN-Based LEDs

Contact Info

Product

Resources

About