GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review

Murugapandiyan, P.; Lakshmi, V. Rajya; Ramkumar, Nirupama; Perumal, Eswaran; Wasim, Mohammad

doi:10.1007/978-981-15-3172-9_33

Cited by 4 publications

(2 citation statements)

References 25 publications

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“…Spectral response of graphene-based devices range from ultraviolet to THz wavelengths. GaN being a wide bandgap material also finds applications in the visibleultraviolet spectral range and THz devices [31][32][33]. Being an atomistically thin material, graphene suffers from limited spatial-interaction with light limiting modulation depth to 2.3 % [29,34] similar to 2DEG EOM proposed in our earlier work [22].…”

Section: Introductionmentioning

confidence: 90%

Design and analysis of electro-optic modulators based on high contrast gratings in AlGaN/GaN heterostructures

Das

Singh

Tallur

2020

Semicond. Sci. Technol.

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Recently High Electron Mobility Transistor (HEMT) inspired III-V electro-optic modulator topologies were proposed for realizing high speed electro-optic modulators leveraging plasma dispersion effect due to the 2D Electron Gas (2DEG) present at the III-V heterostructure interface. The 2DEG is highly confined at the interface, extending to very low depths in the bulk (≈10 nm) and therefore has limited spatial overlap with the optical mode. In this paper, we propose a novel modulator design to boost the 2DEG-light interaction, wherein the HEMT is embedded within a high contrast grating (HCG) mirror. We present an analytical model extending the conventional HCG model to multi-layer structures and observe good agreement with rigorous coupled-wave analysis (RCWA). We explore the design space for identifying optimal device topology and present geometries that produce a change in reflectivity as large as 70 % for C-and L-band wavelengths. We also present results of sensitivity analysis and observe low variation in device performance due to geometry variation arising from device fabrication imperfections. The device platforms presented here are suitable for designing high efficiency electro-optic modulators by incorporating the HEMT HCG into a Fabry-Perot cavity.

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Section: Introductionmentioning

confidence: 90%

Design and analysis of electro-optic modulators based on high contrast gratings in AlGaN/GaN heterostructures

Das

Singh

Tallur

2020

Semicond. Sci. Technol.

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“…GaN HEMTs have demonstrated considerable promise in the realm of high-frequency and high-power applications, owing to their inherent advantages including high electron mobility and saturation velocity combined with high breakdown voltage [1,2]. Nevertheless, the formation of reliable and repeatable low resistivity ohmic contacts is still a concern in the fabrication of high performance HEMTs.…”

Section: Introductionmentioning

confidence: 99%

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Chen,

Persson,

Darakchieva

et al. 2023

Semicond. Sci. Technol.

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This study presents a novel approach to forming low-resistance ohmic contacts for AlGaN/GaN HEMTs. The optimized contacts exhibit an outstanding contact resistance of approximately 0.15 Ω·mm. This is achieved by firstly recessing the barrier of the heterostructure to a depth beyond the channel. In this way, the channel region is exposed on the sidewall of the recess. The coverage of the Ti/Al/Ti ohmic metalization on the sidewall is ensured through tilting of the sample during evaporation. The annealing process is performed at a low temperature of 550 °C. The approach does not require precise control of the recess etching. Furthermore, the method is directly applicable to most barrier designs in terms of thickness and Al-concentration. The impact of recessed sidewall angle, thickness and ratio of Ti and Al layers, and the annealing procedure are investigated. Structural and chemical analyses of the interface between the ohmic contacts and epi-structure indicate the formation of ohmic contacts by the extraction of nitrogen from the epi-structure. The approach is demonstrated on HEMT-structures with two different barrier designs in terms of Al-concentration and barrier thickness. The study demonstrate large process window in regard to recess depth and duration of the annealing as well as high uniformity of the contact resistance across the samples, rendering the approach highly suitable for industrial production processes.

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Adsorption behaviour of NO, NO2, CO and CS2 molecules on the surface of carbon-doped gallium nitride nanosheet: A DFT study

Roohi

Ardehjani

2022

Surface Science

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GaN-Based High-Electron Mobility Transistors for High-Power and High-Frequency Application: A Review

Cited by 4 publications

References 25 publications

Design and analysis of electro-optic modulators based on high contrast gratings in AlGaN/GaN heterostructures

Design and analysis of electro-optic modulators based on high contrast gratings in AlGaN/GaN heterostructures

Structural investigation of ultra-low resistance deeply recessed sidewall ohmic contacts for AlGaN/GaN HEMTs based on Ti/Al/Ti-metallization

Adsorption behaviour of NO, NO2, CO and CS2 molecules on the surface of carbon-doped gallium nitride nanosheet: A DFT study

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