GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO<sub>3</sub>Ferroelectric Insulator on Gate-Recessed Structure

Lee, Ching-Ting; Yang, Chang-Lin; Tseng, Chien-Chou; Chang, Jhe-Hao; Horng, Ray−Hua

doi:10.1109/ted.2015.2446990

Cited by 33 publications

(14 citation statements)

References 35 publications

(36 reference statements)

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“…The relationship between IM3 and IIP3 with G m and G ds is expressed as [7]

IM 3 @ \frac{{()(, {G^{normal′ normal′}}_{m})}^{2}}{G_{normalds}^{2} \cdot R_{L}} A^{6},

IIP 3 @ \frac{{()(, G_{m})}^{3}}{{G^{normal′ normal′}}_{m} \cdot G_{normalds}^{2} \cdot R_{L}},

where

G_{m}^{normal′ normal′}

is the second derivative of transconductance and A is the single amplitude and R L is the load impedance. Equations (3) and (4) indicate that IM3 is directly proportional to

{({G^{''}}_{normalm})}^{2}

, whereas the IIP3 is inversely proportional to

G_{m}^{normal′ normal′}

and directly proportional to

{(G_{m})}^{3}

.…”

Section: Resultsmentioning

confidence: 99%

“…The intermodulation products and gain compression, which are generated from devices second‐ and third‐order non‐linearity, are solely responsible for distortion in signal performance through the communication channel. The non‐linear transconductance, capacitance, and output conductance are the main sources of non‐linearity in GaN MOS‐HEMT [7].…”

Section: Introductionmentioning

confidence: 99%

“…Recently ferroelectric materials have been used beneath the gate to obtain E-mode operation due to its strong polarisation effects, which results in polarisation engineering of twodimensional electron gas (2DEG) and shifts the threshold voltage towards the positive direction. Furthermore, it is also observed that these ferroelectric-based GaN MOS-HEMTs have improved linearity and higher gate voltage swing (GVS) [6][7][8]. However, a little attention was paid on improving the linearity of ferroelectric gate MOS-HEMT through structural engineering.…”

mentioning

confidence: 99%

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Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology

Panda

Lenka

2019

Micro & Nano Letters

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In this work, an enhancement mode dual gate ferroelectric gallium nitride metal oxide semiconductor-high electron mobility transistor (GaN MOS-HEMT) is proposed with enhanced linearity characteristics. The different DC characteristics of the device are analysed and compared with available experimental data of single gate un-recessed ferroelectric GaN MOS-HEMT. In order to analyse the linearity performance of the devices, a look up table-based large signal model is developed directly from technology computer-aided device simulation results built by feeding different small signal parameters. The different linearity characteristics such as input third-order intercept point (IIP3), the input gain compression point (P1dB), third-order intermodulation (IM3) and the carrier to intermodulation power ratio of both the devices are compared by harmonic balance simulation of the developed large signal models. The interlink between IIP3 and IM3 with transconductance indicates that the broader the transconductance distribution with respect to different gate voltage generates higher IIP3 and lower IM3, which results in an improved linearity performance. The dual gate device shows improved linearity performance resulting in applicability in radiofrequency front end receiver.

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“…The relationship between IM3 and IIP3 with G m and G ds is expressed as [7]

IM 3 @ \frac{{()(, {G^{normal′ normal′}}_{m})}^{2}}{G_{normalds}^{2} \cdot R_{L}} A^{6},

IIP 3 @ \frac{{()(, G_{m})}^{3}}{{G^{normal′ normal′}}_{m} \cdot G_{normalds}^{2} \cdot R_{L}},

where

G_{m}^{normal′ normal′}

is the second derivative of transconductance and A is the single amplitude and R L is the load impedance. Equations (3) and (4) indicate that IM3 is directly proportional to

{({G^{''}}_{normalm})}^{2}

, whereas the IIP3 is inversely proportional to

G_{m}^{normal′ normal′}

and directly proportional to

{(G_{m})}^{3}

.…”

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

See 1 more Smart Citation

Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology

Panda

Lenka

2019

Micro & Nano Letters

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“…In the past few decades, despite the fact that impressive gallium nitride (GaN)-based depletion- and enhancement-mode single-channel metal-oxide-semiconductor high-electron mobility transistors (MOSHEMTs) are successfully manufactured and widely utilized in various practical systems [ 1 , 2 , 3 , 4 ], compelling devices with enhanced performance are still in urgent demand. To enhance performances of GaN-based MOSHEMTs, it is required to increase the electron mobility and sheet electron density of two-dimensional electron gas (2-DEG) channel induced by the polarized AlGaN/GaN heterostructured interface.…”

Section: Introductionmentioning

confidence: 99%

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

et al. 2021

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Multiple-mesa-fin-channel array patterned by a laser interference photolithography system and gallium oxide (Ga2O3) gate oxide layer deposited by a vapor cooling condensation system were employed in double-channel Al0.83In0.17N/GaN/Al0.18Ga0.82N/GaN heterostructured-metal-oxide-semiconductors (MOSHEMTs). The double-channel was constructed by the polarized Al0.18Ga0.82N/GaN channel 1 and band discontinued lattice-matched Al0.83In0.17N/GaN channel 2. Because of the superior gate control capability, the generally induced double-hump transconductance characteristics of double-channel MOSHEMTs were not obtained in the devices. The superior gate control capability was contributed by the side-wall electrical field modulation in the fin-channel. Owing to the high-insulating Ga2O3 gate oxide layer and the high-quality interface between the Ga2O3 and GaN layers, low noise power density of 8.7 × 10−14 Hz−1 and low Hooge’s coefficient of 6.25 × 10−6 of flicker noise were obtained. Furthermore, the devices had a unit gain cutoff frequency of 6.5 GHz and a maximal oscillation frequency of 12.6 GHz.

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“…Despite impressive performances of GaN-based metal-semiconductor highelectron mobility transistors (MESHEMTs), metal-oxidesemiconductor high-electron mobility transistors (MOSHEMTs) have more recently attracted interest to improve the high voltage operation and high power-handling capability. Several dielectric materials have been used as gate insulator by inserting them between the GaN-based semiconductors and gate metals [3]− [5]. Owing to the high radiation resistance, high breakdown electric field, high thermal stability, and high chemical stability of Ga2O3 material [6], it has previously been used in electronic devices and electrooptical devices [7]− [9].…”

mentioning

confidence: 99%

Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

Lee

Chang

et al. 2021

IEEE J. Electron Devices Soc.

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In this work, the properties of gallium oxide (Ga2O3) and its excellent interface properties to GaN-based materials are explored as a gate insulator layer for GaN-based metal-oxidesemiconductor high-electron mobility transistors (MOSHEMTs). A novel vapor cooling condensation system was used to deposit the high quality Ga2O3 films with high insulation and low defect suitable for gate insulator layer. The characteristics of the Ga2O3 films were further explored by implementing GaN-based fin-channel array MOSHEMTs with recessed-gates and different channel widths. Compared to planar channel structure, the direct current, high frequency, and flicker noise performances were enhanced in the fin-channel MOSHEMTs with Ga2O3 gate insulator layer. For the GaN-based fin-channel array MOSHEMTs with 300-nm-wide channel, the devices exhibited superior performances of maximum extrinsic transconductance of 194.2 mS/mm, threshold voltage of −1.4 V, extrinsic unit gain cutoff frequency of 6.4 GHz, maximum oscillation frequency of 14.8 GHz, and normalized noise power of 8.45  10 −15 Hz −1 . It was also demonstrated that the associated performances were improved by reducing the width of fin-channel array. Index Terms-Ga2O3 gate insulator layer, GaN-based MOSHEMTs, Laser interference photolithography system, Finchannel array, Vapor cooling condensation system. I. INTRODUCTIONGaN-based high-electron mobility transistors (HEMTs) are suitable for high temperature, high power, and high frequency applications [1], [2], due to wide bandgap as well as good electron transport properties and high sheet electron density of two-dimensional electron gas (2-DEG) residing in the available Manuscript received ? ?, 2021.

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GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃Ferroelectric Insulator on Gate-Recessed Structure

Cited by 33 publications

References 35 publications

Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology

Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

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GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO3Ferroelectric Insulator on Gate-Recessed Structure

Cited by 33 publications

References 35 publications

Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology

Linearity improvement in E‐mode ferroelectric GaN MOS‐HEMT using dual gate technology

Lattice-Matched AlInN/GaN/AlGaN/GaN Heterostructured-Double-Channel Metal-Oxide-Semiconductor High-Electron Mobility Transistors with Multiple-Mesa-Fin-Channel Array

Fabrication and Characterization of GaN-Based Fin-Channel Array Metal-Oxide-Semiconductor High-Electron Mobility Transistors With Recessed-Gate and Ga₂O₃ Gate Insulator Layer

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GaN-Based Enhancement-Mode Metal–Oxide–Semiconductor High-Electron Mobility Transistors Using LiNbO₃Ferroelectric Insulator on Gate-Recessed Structure