GaN and AlGaN(p)/GaN p-i-n ultraviolet photodetectors

Xu, G. Y.; Salvador, A.; Bothckarev, A.; Kim, Wonsuck; Fan, Z.; Tang, H.; Morkoç, H.; Smith, Gary M.; Estes, Michael J.; Goldenberg, B.; Yang, Wei; Krishnankutty, S.

doi:10.1109/drc.1997.612495

1997 55th Annual Device Research Conference Digest

DOI: 10.1109/drc.1997.612495

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GaN and AlGaN(p)/GaN p-i-n ultraviolet photodetectors

G. Y. Xu

A. Salvador

A. Bothckarev

et al.

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Gallium nitride past, present, and future

Yoder

1997

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97

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Gallium nitride (GaN) has been known for some time'. The first U.S. Government research funding began in 1970 with substantial increases in 1982 and again in 1993 and 1995. While the biggest initial commercial interest is in visible light emission, there will be substantial commercial and governmental use of ultra violet (UV) applications as well. It is, however, in the microwave and the millimeter wave spectrum where GaN will engender new systems enabling applications. It is here where anticipated hlly digital signal synthesis and beam steering technology will require broadband, linear, efficient amplifiers with moderate power levels; GaN currently appears to be the most promising candidate semiconductor for SUCR amplifiers.K-i for T = 300 -700 K and at a rate of+7.75 x K-' for T = 700 -900 K.' GaN

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Gallium nitride past, present, and future

Yoder

1997

Proceedings IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits CORNEL-97

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show abstract

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GaN and AlGaN(p)/GaN p-i-n ultraviolet photodetectors

Cited by 1 publication

References 3 publications

Gallium nitride past, present, and future

Gallium nitride past, present, and future

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