GaN/AlN p-channel HFETs with Imax &gt;420 mA/mm and ~20 GHz fT / fMAX

“…The same issues are also expected to arise if the polarity of the films are flipped, and a 2DEG is generated at the GaN/AlN interface on N-polar AlN buffer layer. With the rising relevance of AlN as the platform for UV photonics and future RF electronics 8,28 , significant interest exists in using 2DEGs and 2DHGs on AlN to make RF p-channel 7,29 and n-channel transistors 30,31 and enable wide-bandgap RF CMOS type devices. Combining the results of this work with recent advancements in homoepitaxial growths of AlN 32,33 should enable fundamental scientific studies of 2DEGs and 2DHGs in such polar heterostructures and simultaneously enable significant technological advances.…”

Section: Discussionmentioning

confidence: 99%

“…Using GaN/AlN 2DHGs as the channel, scaled GaN p-channel heterostructure field effect transistors (p-HFETs) with record high on-currents exceeding 400 mA/mm were reported recently 7 which, for the first time, broke the GHz speed barrier with cut-off frequencies in the 20 GHz regime. With key p-channel FET device parameters making a climb towards that of GaN n-channel HEMTs, this result represents a significant step towards enabling high-voltage RF wide-bandgap complementary device platforms 8 .…”

Section: Introductionmentioning

confidence: 99%

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers

Chaudhuri,

Chen,

Muller

et al. 2021

Preprint

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High-conductivity undoped GaN/AlN 2D hole gases (2DHGs), the p-type dual of the AlGaN/GaN 2D electron gases (2DEGs), have offered valuable insights into hole transport in GaN and enabled the first GaN GHz RF p-channel FETs. They are an important step towards high-speed and high-power complementary electronics with wide-bandgap semiconductors. These technologically and scientifically relevant 2D hole gases are perceived to be not as robust as the 2DEGs because structurally similar heterostructures exhibit wide variations of the hole density over ∆p s > 7 × 10 13 cm −2 , and low mobilities. In this work, we uncover that the variations are tied to undesired dopant impurities such as Silicon and Oxygen floating up from the nucleation interface. By introducing impurity blocking layers (IBLs) in the AlN buffer layer, we eliminate the variability in 2D hole gas densities and transport properties, resulting in a much tighter-control over the 2DHG density variations to ∆p s ≤ 1 × 10 13 cm −2 across growths, and a 3× boost in the Hall mobilities. These changes result in a 2-3× increase in hole conductivity when compared to GaN/AlN structures without IBLs.

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“…The fabricated long channel p-type device when compared with p-FET GaN/AlGaN on sapphire substrate exhibits state of the art on-off ratio performance. A p-channel 2DHG GaN/AlN transistors which can break the barrier of GHz speed was demonstrated [120]. The fabricated transistor exhibits an on-current density of 428 mA/mm and a cut-off frequency of 20 GHz.…”

Section: Gan-based Cmos Technologymentioning

confidence: 99%

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Hsu

Lai

et al. 2021

Micromachines

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GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from the high-frequency power amplifier to the high voltage devices used in power electronic systems. Development of GaN HEMT on Si-based substrate is currently the main focus of the industry to reduce the cost as well as to integrate GaN with Si-based components. However, the direct growth of GaN on Si has the challenge of high defect density that compromises the performance, reliability, and yield. Defects are typically nucleated at the GaN/Si heterointerface due to both lattice and thermal mismatches between GaN and Si. In this article, we will review the current status of GaN on Si in terms of epitaxy and device performances in high frequency and high-power applications. Recently, different substrate structures including silicon-on-insulator (SOI) and engineered poly-AlN (QST®) are introduced to enhance the epitaxy quality by reducing the mismatches. We will discuss the development and potential benefit of these novel substrates. Moreover, SOI may provide a path to enable the integration of GaN with Si CMOS. Finally, the recent development of 3D hetero-integration technology to combine GaN technology and CMOS is also illustrated.

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GaN/AlN p-channel HFETs with I_max >420 mA/mm and ~20 GHz f_T / f_MAX

Cited by 22 publications

References 5 publications

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

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GaN/AlN p-channel HFETs with Imax >420 mA/mm and ~20 GHz fT / fMAX

Cited by 22 publications

References 5 publications

Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si

Tungsten-Gated GaN/AlGaN p-FET With Imax > 120 mA/mm on GaN-on-Si

High conductivity Polarization-induced 2D hole gases in Undoped GaN/AlN Heterojunctions enabled by Impurity Blocking Layers

Development of GaN HEMTs Fabricated on Silicon, Silicon-on-Insulator, and Engineered Substrates and the Heterogeneous Integration

Contact Info

Product

Resources

About

GaN/AlN p-channel HFETs with I_max >420 mA/mm and ~20 GHz f_T / f_MAX

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si

Tungsten-Gated GaN/AlGaN p-FET With I_max > 120 mA/mm on GaN-on-Si