Gamma-stimulated change of the photoluminescence properties of Cd1−Zn Te thin films

CdZnTe thin films as proficient absorber layer candidates in solar cell devices: a review

“…51,86,87 The chemical process can also be further classified based on the type of precursor, applications, reactors used and chemical reactions. 86 Among the chemical routes, techniques such as metal-organic chemical vapor deposition (MOCVD), 88,89 electrodeposition/electro-plating [90][91][92] and liquid-phase epitaxy 93 have been frequently applied thus far to develop the CdZnTe thin films and the corresponding devices. These growth techniques are briefly discussed in the following sections together with a review of the corresponding target.…”

“…95,96 Cd 0.9 Zn 0.1 Te thin films having a thickness of 10 mm were deposited on CdTe single-crystal substrates using the LPE method, where the photoluminescence (PL) properties of these films were studied as a function of the gamma irradiation dose. 93 The merits and drawbacks of the different thin film deposition techniques are summarized in Table 2.…”

Sigmoid-growth curve of lattice-constant against annealing-temperature of Cd1−xZnxTe thin films and its structural, optical and morphological characteristics

“…Experimental results suggested that increased doping rates of Zn in Cd 1 À x Zn x Te improved the signal-to-noise ratio and reduced the leakage current [11]. Nasieka et al further studied the photoluminescence property of Cd 1 À x Zn x Te thin films on CdTe substrates under irradiation with different doses of γ-rays [12]. Thin Film CdZnTe Detector Arrays built for Digital Mammography focused chiefly on 1) optimization of physical and electrical properties of MOCVD-deposited CdTe and CdZnTe, and 2) improved understanding of the operation of CdS/Cd(Zn)Te heterojunctions to reduce the leakage currents.…”