$\gamma $ -Ray Detection Using Commercial Off-the-Shelf CMOS and CCD Image Sensors

Xu, Shoulong; Zou, Shuliang; Youjun, Huang

doi:10.1109/jsen.2017.2732499

Cited by 22 publications

(4 citation statements)

References 18 publications

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“…The Commercial Off-the-Shelf Complementary Metal Oxide Semiconductor (COTS CMOS) image sensors image sensors chips in integrated circuits comprise reading electronics, video output conversion and the array of Active Pixel Sensor (APS) cells, which consumes low power, is much small, portable [15]. There are many studies on the potential use of CMOS image sensors for radiation detection [16]. Martín Pérez et al used X-ray photons, gamma photons, beta particles and alpha particles from diverse sources to irradiate COTS CMOS image sensors, and analyzed of these irradiated sensors [17].…”

Section: Introductionmentioning

confidence: 99%

Counting alpha particles produced by radon daughters using commercial off-the-shelf complementary metal oxide semiconductor (COTS CMOS) image sensors

Lin,

Xie,

et al. 2024

J. Inst.

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Radon (Rn-222) is the main source of radiation exposure to human beings from natural radiation; it is of great significance to study the measuring methods and measuring instruments of radon for natural radiation protection. In recent years, the application of pixel detectors in radiation detection has attracted attention. In this paper, a Commercial Off-the-Shelf Complementary Metal Oxide Semiconductor (COTS CMOS) image sensor which replaces the glass for protection covering in front of the sensors was used to perform a series of measurements to identify alpha particles. During the experiment, the CMOS image sensor was used to record a video during the sampling period, and then use the FFmpeg software to take screenshots of the video by frame. MATLAB was used to count bright spots from the image frames. A measurement chamber was designed to measure radon concentrations, and when the relative humidity was constant, the count of alpha particles by the CMOS image sensor increased along with the increase of the concentration. The experiments verified the feasibility of the low-cost COTS CMOS image sensors to monitor radon.

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Section: Introductionmentioning

confidence: 99%

Counting alpha particles produced by radon daughters using commercial off-the-shelf complementary metal oxide semiconductor (COTS CMOS) image sensors

Lin,

Xie,

et al. 2024

J. Inst.

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“…Depending on the different types of particle detectors, different techniques and methods can be used to achieve the identification. Both the CMOS (complementary metal oxide semiconductor) and the CCD (charge-coupled device) photo sensors have a wide range of applications in space probes to capture images and data in the universe [6]. It includes capturing images of galaxies, stars and planets, and analyzing the spectra of different wavelengths in the universe.…”

Section: Introductionmentioning

confidence: 99%

Analysis of Electric Sensor for Space Detectors: Mass Spectrometer, Particle Detector and CMOS/CCD Sensor

Lin

2023

HSET

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As a matter of fact, with the participation of government agencies and the exploration of private enterprises, space exploration is undergoing rapid development as well as change in recent years. With this in mind, these trends will continue to promote human exploration and utilization of space, providing more opportunities for scientific research, commercial applications and exploration. In order to realize accuracy observation, high precision detectors are necessary to be developed and implemented. To be specific, a large number of electric sensors are applied on the space detectors, including mass spectrometer, particle detector as well as CMOS/CCD image sensor, etc. On this basis, this paper presents the principles, structures and applications of these three electric sensors in detail. According to the analysis, this study also analyzes the existing shortcomings of the state-of-art facilities as well as proposes future developments. Overall, these results shed light on guiding further exploration of space detectors.

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“…Chen et al (2016) implement the CMOS image sensor (CIS) with area-efficient block-based compressive sensing. Whereas, in these applications including vision-based IoT devices, embedded AI, measurement imaging and compressive sensing encoding (Chen et al , 2019; Chen et al , 2016; Dadkhah et al , 2015; Shoulong et al , 2017; Lu et al , 2017; Gouveia and Choubey, 2016), the pixel linearity dramatically affects image quality and perceptual performance. Worse still, the prevailing active pixel sensor structure widely applied in SIS suffers poor linearity (Chen et al , 2019; Dadkhah et al , 2015).…”

Section: Introductionmentioning

confidence: 99%

Low-power in-pixel buffer circuit for smart image sensor

Qin

Zhu²,

Huang

et al. 2020

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Purpose The smart image sensor (SIS) which integrated with both sensor and smart processor has been widely applied in vision-based intelligent perception. In these applications, the linearity of the image sensor is crucial for better processing performance. However, the simple source-follower based readout circuit in the conventional SIS introduces significant nonlinearity. This paper aims to design a low-power in-pixel buffer circuit applied in the high-linearity SIS for the smart perception applications. Design/methodology/approach The linearity of the SIS is improved by eliminating the non-ideal effects of transistors and cancelling dynamic threshold voltage that changes with the process variation, voltage and temperature. A low parasitic capacitance low leakage switch is proposed to further improve the linearity of the buffer. Moreover, an area-efficient SIS architecture with a sharing mechanism is presented to further reduce the number of in-pixel transistors. Findings A low parasitic capacitance low leakage switch and a gate-source voltage pre-storage method are proposed to further improve the linearity of the buffer. Nonlinear effects introduced by parasitic capacitance switching leakage, etc., have been investigated and solved by proposing low-parasitic and low-leakage switches. The linearity is improved without a power-hungry operational amplifier-based calibration circuit and a noticeable power consumption increment. Originality/value The proposed design is implemented using a standard 0.18-µm CMOS process with the active area of 102 µm2. At the power consumption of 5.6 µW, the measured linearity is −63 dB, which is nearly 27 dB better than conventional active pixel sensor (APS) implementation. The proposed low-power buffer circuit increase not only the performance of the SIS but also the lifetime of the smart perception system.

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$\gamma $ -Ray Detection Using Commercial Off-the-Shelf CMOS and CCD Image Sensors

Cited by 22 publications

References 18 publications

Counting alpha particles produced by radon daughters using commercial off-the-shelf complementary metal oxide semiconductor (COTS CMOS) image sensors

Counting alpha particles produced by radon daughters using commercial off-the-shelf complementary metal oxide semiconductor (COTS CMOS) image sensors

Analysis of Electric Sensor for Space Detectors: Mass Spectrometer, Particle Detector and CMOS/CCD Sensor

Low-power in-pixel buffer circuit for smart image sensor

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