Gamma Irradiation and Annealing Effects in Nitrogen-Doped GaAs1-xPx Green and Yellow Light-Emitting Diodes

Epstein, A. S.; Share, S.; Polimadei, R. A.; Herzog, A. H.

doi:10.1109/tns.1972.4326863

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1973

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Cited by 13 publications

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“…18) for fibered versus unfibered LEDs. This result suqqests that these shifts are "due to effects other than the fiber or that the fiber attenuation is a minimum near 0.8 4 Wmnj that is for GaAs there is increased fiber absorption above 0.89gin so that piqtailing causes a shift to shorter wavelength, while for GMLAs the attenuation increases with decreasinq wavelength below about 0.841Pi cauminq an opposite shift. At any rate, these shifts are relatively sarll even in comparison to the apparent dopinq level shift between C45-124-44 (doping level increased to increase speed) and CXL009, CXLW13, P658(2-3 x 10 1 8 ae/cm 3 ).…”

Section: ~mentioning

confidence: 80%

Radiation Effects in Pigtailed GaAs and GaAIAs LEDs

Barnes¹

1981

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Section: ~mentioning

confidence: 80%

Radiation Effects in Pigtailed GaAs and GaAIAs LEDs

Barnes¹

1981

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The influence of γ-irradiation on the degradation of red-emitting GaP LED's

Dzhafaröv

Kolotov

Litvin

1978

Phys. Stat. Sol. (a)

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The effect of γ‐irradiation on the degradation of p‐GaP‐n‐GaP red light emitting diodes (LED's) is studied. It is shown that after the irradiation to a dose of 1.5 × 1017 γ/cm2 the LED's degrade, a decrease of red electroluminescence maximum (λ = 0.675 μm, T = 77 K) by a factor of about 3 to 6 is observed. A following isochronal annealing of the irradiated diodes over the temperature interval from 100 to 300 °C leads to a partial recovery of the starting luminescence properties of the diodes. Similar effect is also observed when forward currents flow through the diode (j = 10−1 to 10−2 A/cm2) at temperatures 77 and 300 K. The data obtained are explained by defects (Frenkel type) which act as non‐radiative centres.

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