Gamma- and electron-irradiation effects on second order active filters

Swidan, A.M.; El‐Ghanam, S. M.; Ashry, H. A.; Soliman, F. A.; Abdel-Basit, W.

doi:10.1109/mwscas.2003.1562543

Cited by 2 publications

(2 citation statements)

References 6 publications

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“…On the other hand, some other parameters were shown suffering a pronounced decrease; common-mode rejection ratio; gain; common mode input resistance and offset voltage adjustment range. The devices failure can be explained from a knowledge of damage theory for transistors, diodes and integrated circuits [5][6][7][8][9][10][11][12][13].…”

Section: Resultsmentioning

confidence: 99%

Study of the Gamma‐ray Effects on Operational Amplifier Characteristics

Swidan

El‐Ghanam

Ashry

et al. 2005

AIP Conference Proceedings

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Exposing the "µA 741C" Operational-Amplifiers to gamma-rays with different doses up to 3.5x106 rad was shown to seriously affect their electrical characteristics. Consequently, the devices lose their main features as a result of major defects that cause deviation in the basic behaviors of the system. The differential-mode gain and input resistance values were dropped from 185 V/mV to 70 V/mV and from 9x106 ohm to 1.5x106 ohm respectively. Also, the offset voltage adjustment range was decreased from the band (-12 to +14) mV down to (-1.50 to +2.0) mV. The common-mode rejection ratio which had, as well, an initial value of 100 dB before irradiation reaches a value of 2.0 dB after exposure to 3.5x106 rad. On the other hand, the power supply rejection ratio and input offset voltage and current were shown to have a pronounced increase as a result of gamma exposure. Their values reach 430 µV/V, 75 mV and 50 nA although they have initial values of 20 µV/V, 5.0 mV and 1.0 nA respectively.

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Section: Resultsmentioning

confidence: 99%

Study of the Gamma‐ray Effects on Operational Amplifier Characteristics

Swidan

El‐Ghanam

Ashry

et al. 2005

AIP Conference Proceedings

View full text Add to dashboard Cite

show abstract

“…When high energy radiation is incident on a semiconductor device, energy is deposited in the semiconductor via two mechanisms [6][7][8][9][10][11][12][13][14][15][16][17], atomic collisions and electronic ionization. The relative importance of these two mechanisms in a semiconductor structure depends both on the type of radiation and the nature of the device.…”

Section: Radiation Effectsmentioning

confidence: 99%

Operation of Bidirectional Switches (DIAC) and Silicon Controlled Rectifiers (SCR) in Gamma‐Radiation Environment

Swidan

El‐Ghanam

Soliman

2005

AIP Conference Proceedings

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Articles you may be interested inSelf-rectifying resistive-switching characteristics with ultralow operating currents in SiOxNy/AlN bilayer devices ABSTRACT. Gamma-irradiation effects on the electrical parameters of the Diode AC switch (DIAC; PHI37 500) and Silicon Controlled Rectifier (SCR; 2N4444) devices have been studied in detail, where gamma-dose up to 137 x 106 rad was found to cause a serious permanent damage on their electrical characteristics. A pronounced increase in the breakover voltage (from 31.5 to 35 V), holding-current (from 13 to 53 mA) and holding voltage (from 22 to 32 V) of the DIAC is noticed. Besides, a severe decrease in the dynamic break-over voltage range (from 10 to 2.5 V) and negative resistance (from -750 to -168 ohm) is also observed. Exposing the SCRs to gamma-radiation causes their turn-on voltage and forward voltage drop values to increase from 0.8 to 2.8 V and from 1.4 to 4.5 V, respectively. Additionally, the holding current increases to 18 mA although its initial value is 3.5 mA. For the two devices, the linear dependence and high sensitivity of their electrical parameters to gamma-dose suggest the application of such devices in the field of radiation dosimetry.

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Gamma- and electron-irradiation effects on second order active filters

Cited by 2 publications

References 6 publications

Study of the Gamma‐ray Effects on Operational Amplifier Characteristics

Study of the Gamma‐ray Effects on Operational Amplifier Characteristics

Operation of Bidirectional Switches (DIAC) and Silicon Controlled Rectifiers (SCR) in Gamma‐Radiation Environment

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