Galvanic replacement-mediated synthesis of hollow Cu<sub>2</sub>O–Au nanocomposites and Au nanocages for catalytic and SERS applications

Xiong, Lu; Li, Siwei; Zhang, Bin; Du, Yunchen; Ma, Yan; Han, Yingxin; Zhao, Honglin; Xu, Ping

doi:10.1039/c5ra13426a

Cited by 17 publications

(17 citation statements)

References 37 publications

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“…Due to the large EFs induced by the EM mechanism, noble metals (Au and Ag) with well‐defined surface nanostructures have been mainly used as the substrate materials for SERS . Recently, additional feasible SERS platforms adopting active and stable materials other than noble metals have been developed . Since the discovery of graphene‐enhanced Raman scattering (GERS) effect (based on a photoinduced electron transfer mechanism and/or an energy transfer mechanism), it has become an attractive signal enhancement technique owing to the advantages of graphene, such as unique electronic and photonic structures, atomic uniformity, biological compatibility, large delocalized π bond, and chemical inertness .…”

Section: Introductionmentioning

confidence: 99%

Significantly Increased Raman Enhancement on MoX₂ (X = S, Se) Monolayers upon Phase Transition

Yin

Miao

Zhang

et al. 2017

Adv Funct Materials

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165

161

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2D transition metal dichalcogenide (TMD) materials have been recognized as active platforms for surface‐enhanced Raman spectroscopy (SERS). Here, the effect of crystal structure (phase) transition is shown, which leads to altered electronic structures of TMD materials, on the Raman enhancement. Using thermally evaporated copper phthalocyanine, solution soaked rhodamine 6G, and crystal violet as typical probe molecules, it is found that a phase transition from 2H‐ to 1T‐phase can significantly increase the Raman enhancement effect on MoX2 (X = S, Se) monolayers through a predominantly chemical mechanism. First‐principle density functional theory calculations indicate that the significant enhancement of the Raman signals on metallic 1T‐MoX2 can be attributed to the facilitated electron transfer from the Fermi energy level of metallic 1T‐MoX2 to the highest occupied molecular orbital level of the probe molecules, which is more efficient than the process from the top of valence band of semiconducting 2H‐MoX2. This study not only reveals the origin of the Raman enhancement and identifies 1T‐MoSe2 and 1T‐MoS2 as potential Raman enhancement substrates, but also paves the way for designing new 2D SERS substrates via phase‐transition engineering.

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Section: Introductionmentioning

confidence: 99%

Significantly Increased Raman Enhancement on MoX₂ (X = S, Se) Monolayers upon Phase Transition

Yin

Miao

Zhang

et al. 2017

Adv Funct Materials

Self Cite

165

161

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“…Generally, this is performed using sacrificial metal templates such as Ag and Cu which are replaced with more noble metals such as Au, Pt, and Pd. However recently, the concept of galvanic replacement has been extended to semiconducting materials, metal oxides, and even Prussian Blue . To date there has been no report on galvanically replacing layered double hydroxides such as Co(OH) 2 or Ni(OH) 2 with metals such as Au to generate composite materials that could be highly active for both the HER and OER.…”

Section: Introductionmentioning

confidence: 99%

Gold Doping in a Layered Co‐Ni Hydroxide System via Galvanic Replacement for Overall Electrochemical Water Splitting

Sultana

Riches

O’Mullane

2018

Adv Funct Materials

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The development of active yet stable bifunctional materials to produce hydrogen and oxygen via electrochemical water splitting is an ongoing challenge. Here, a system based on electrodeposited Ni(OH) 2 and Co(OH) 2 containing highly distributed gold nanoparticles at less than 0.25 at% to facilitate the hydrogen evolution reaction (HER) and oxygen evolution reaction (OER) under alkaline conditions is developed. The key aspect is using galvanic replacement to deposit gold on a layer of electrodeposited Co(OH) 2 prior to electrodepositing Ni(OH) 2 . The fabrication of a composite system based on Co(OH) 2 -Au-Ni(OH) 2 is required for optimal activity for both the HER and OER. The composite is characterized with helium ion microscopy, transmission electron microscopy, depth profiling X-ray photoelectron microscopy, and a variety of electrochemical techniques. This material exceeds the activity of Pt for the HER at current densities greater than 40 mA cm −2 and is stable for both reactions for prolonged periods of electrolysis. In a two-electrode configuration, current densities greater than 175 mA cm −2 for overall water splitting could be readily achieved at an applied voltage of 1.90 V in a commercially relevant electrolyte of 6 m NaOH.

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“…The galvanic replacement is a straight-forward method to prepare heterojunction nanomaterials through partial replacement of one metal NP with another metal component [365,366]. Galvanic replacement between oxidizable metal substances and reducible ions in the solution has been reported [365,366]. For example, Kim and co-workers [365] successfully synthesized Pt/Mn3O4 heterojunction structure via employing the galvanic replacement process happening between the Mn3O4 surface and PtCl4 2− complex (Fig.…”

Section: Replacement Reaction For Heterojunction Structuresmentioning

confidence: 99%

Section: Replacement Reaction For Heterojunction Structuresmentioning

confidence: 99%

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Understanding of the major reactions in solution synthesis of functional nanomaterials

Wang

2016

Sci. China Mater.

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This review covers the major reactions involved in the solution synthesis of nanomaterials. It was designed to classify the traditional strategies such as precipitation, reduction, seed growth, etching, and so on into two basic processes which are termed as bottom-up and top-down routines. The discussion is focused on the basic mechanism and principles during the nucleation and growth of nanocrystals, especially in the solution system. This review also presents a prediction for how to utilize these intrinsic processes to artificially construct the desired specific and functional nanostructures. We try to describe the most directive and effective way to control the structures of nanocrystals for researchers who can master the major reaction mechanism and grasp the basic technologies in synthetic nanoscience.

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Galvanic replacement-mediated synthesis of hollow Cu₂O–Au nanocomposites and Au nanocages for catalytic and SERS applications

Abstract: Here we demonstrate the synthesis of hollow Cu2O–Au nanocomposites and Au nanocages via a galvanic replacement reaction (GRR) between Cu2O nanocubes and HAuCl4 for catalytic and SERS applications.

Cited by 17 publications

References 37 publications

Significantly Increased Raman Enhancement on MoX₂ (X = S, Se) Monolayers upon Phase Transition

Significantly Increased Raman Enhancement on MoX₂ (X = S, Se) Monolayers upon Phase Transition

Gold Doping in a Layered Co‐Ni Hydroxide System via Galvanic Replacement for Overall Electrochemical Water Splitting

Understanding of the major reactions in solution synthesis of functional nanomaterials

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Galvanic replacement-mediated synthesis of hollow Cu2O–Au nanocomposites and Au nanocages for catalytic and SERS applications

Abstract: Here we demonstrate the synthesis of hollow Cu2O–Au nanocomposites and Au nanocages via a galvanic replacement reaction (GRR) between Cu2O nanocubes and HAuCl4 for catalytic and SERS applications.

Cited by 17 publications

References 37 publications

Significantly Increased Raman Enhancement on MoX2 (X = S, Se) Monolayers upon Phase Transition

Significantly Increased Raman Enhancement on MoX2 (X = S, Se) Monolayers upon Phase Transition

Gold Doping in a Layered Co‐Ni Hydroxide System via Galvanic Replacement for Overall Electrochemical Water Splitting

Understanding of the major reactions in solution synthesis of functional nanomaterials

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Product

Resources

About

Galvanic replacement-mediated synthesis of hollow Cu₂O–Au nanocomposites and Au nanocages for catalytic and SERS applications

Significantly Increased Raman Enhancement on MoX₂ (X = S, Se) Monolayers upon Phase Transition

Significantly Increased Raman Enhancement on MoX₂ (X = S, Se) Monolayers upon Phase Transition