Galvanic deposition of hexagonal ZnO thin films on TCO glass substrate

Mondal, Anup; Mukherjee, Nillohit; Bhar, Sanjib Kumar

doi:10.1016/j.matlet.2005.12.011

Cited by 38 publications

(33 citation statements)

References 31 publications

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“…[7][8][9] Our alternative approach is to use electrochemical deposition to form the rectifying junction. Electrodeposition is a technique that has been used to make ZnO thin films, [15][16][17][18][19] but reports of its electrical resistivity have more often been associated with its function in multilayer systems [20][21][22][23] rather than ZnO alone. 24 Furthermore, none have investigated the impact of humidity changes on electrical responses in electrodeposited ZnO, despite the fact that this synthe-Shawn Chatman and Kristin M. Poduska…”

Section: Introductionmentioning

confidence: 99%

Focused-Ion-Beam-Assisted Magnet Fabrication and Manipulation for Magnetic Field Detection Applications

Campanella

Real

Díaz-Michelena

et al. 2009

ACS Appl. Mater. Interfaces

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The effect of synthesis conditions and . . . AbstractElectrochemically produced ZnO/metal rectifying (Schottky) junctions can exhibit consistent barrier heights and high rectifying ratios when prepared using optimized electrolyte pH (6.5) and applied voltage (≤-1.1 V vs. Ag/AgCl) conditions. An increase in soft breakdown for more acidic deposition electrolytes (pH 4) correlates with a diminished preferred orientation in the resulting ZnO electrodeposit. Forward-biased junctions exposed to increased relative humidities show increased current as a result of protonic conduction from water hydrolysis at the ZnO/air interface.At moderate to high relative humidities (50 − 85% RH), hydrophobic coatings improve the quality of the rectifying response by changing the wetting properties of the ZnO surface. Our findings suggest that electrodeposition, in conjunction with post-deposition surface coatings, can offer improved functionality for electron transport materials in wet or humid environments.

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Section: Introductionmentioning

confidence: 99%

Focused-Ion-Beam-Assisted Magnet Fabrication and Manipulation for Magnetic Field Detection Applications

Campanella

Real

Díaz-Michelena

et al. 2009

ACS Appl. Mater. Interfaces

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“…The driving force to promote the ZnO deposition is the dissolution of zinc ions from metallic zinc, which supplies electrons to the TCO glass, reducing nitrate ions. However, Mondal et al 23 reported that the growth of ZnO stopped at a layer thickness of ϳ0.6 m due to the electrical resistance of ZnO, which becomes higher with increasing thickness.Nonetheless, this system is potentially interesting because one can obtain an external power-free solution process. Furthermore, by not using nitrate ion but using DO to raise the local pH, the following overall reaction is given Zn + 1/2O 2 → ZnO ͓4͔ resulting in a no by-product process that keeps the Zn 2+ concentration constant ͑Fig.…”

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confidence: 99%

“…Recently, Mondal et al 23 reported a unique electrochemical process to deposit ZnO without external power through a "galvanic contact method," also referred to as the "contact immersion method." In this method, a working substrate is short-circuited to an auxiliary electrode, of which the potential when immersed into the deposition bath is negative to the Nernst potential of the cathodic reaction desired on the working substrate.…”

mentioning

confidence: 99%

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confidence: 99%

“…So far, metals, alloys, and metallic calcogenides, such as Cu-Sn, 24 CdTe, [25][26][27][28] and CdSe, 29 have been synthesized by using galvanic contact methods. In the literature, 23 a metallic zinc rod as an anode and transparent conductive oxide-coated ͑TCO͒ glass substrate as a cathode were immersed into a 10 mM ͑M = mol dm −3 ͒ Zn͑NO 3 ͒ 2 solution at 60-80°C, and then the two electrodes were just short-circuited to deposit ZnO. The driving force to promote the ZnO deposition is the dissolution of zinc ions from metallic zinc, which supplies electrons to the TCO glass, reducing nitrate ions.…”

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confidence: 99%

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Sustainable Electrodeposition of ZnO by a Galvanic Contact Method

Shinagawa

Murase

Izaki

2009

Electrochem. Solid-State Lett.

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The galvanic contact deposition of ZnO was carried out by immersing a conductive substrate short-circuited with a Zn rod into O 2 -saturated aqueous Zn͑ClO 4 ͒ 2 solutions, and the deposition behaviors were investigated in comparison with that in Zn͑NO 3 ͒ 2 . The dissolution of the Zn rod in the Zn͑ClO 4 ͒ 2 solutions supplied a continuous and almost constant current to the substrate, allowing the cathodic electrodeposition of ZnO without an external power and by-products. 19 has been synthesized by applying the technique. Moreover, the epitaxial growth of ZnO has also been attained by using lattice-matched substrates. [20][21][22] In these ZnO electrodepositions, cathodic electrolysis is employed in an aqueous Zn͑NO 3 ͒ 2 or ZnCl 2 solution, and the deposition mechanism is based on the increase in local pH in the vicinity of an electrode, followed by hydrolysis of zinc ions to give ZnOSuch a local deposition fashion can, therefore, prevent precipitation in the bulk of solution unlike chemical bath deposition and hydrothermal synthesis. To raise the local pH, the cathodic reduction of dissolved oxygen ͑DO͒ and nitrate ion, which gives hydroxide ion, is generally utilizedand an external power, i.e., potentiostat/galvanostat, is employed to control the electrolysis. Recently, Mondal et al. 23 reported a unique electrochemical process to deposit ZnO without external power through a "galvanic contact method," also referred to as the "contact immersion method." In this method, a working substrate is short-circuited to an auxiliary electrode, of which the potential when immersed into the deposition bath is negative to the Nernst potential of the cathodic reaction desired on the working substrate. The galvanic contact method is, therefore, a kind of "short-circuited galvanic cell" and generally offers a "semipotentiostatic condition" without a set of potentiostat and reference electrodes. So far, metals, alloys, and metallic calcogenides, such as Cu-Sn, 24 CdTe, [25][26][27][28] and CdSe, 29 have been synthesized by using galvanic contact methods. In the literature, 23 a metallic zinc rod as an anode and transparent conductive oxide-coated ͑TCO͒ glass substrate as a cathode were immersed into a 10 mM ͑M = mol dm −3 ͒ Zn͑NO 3 ͒ 2 solution at 60-80°C, and then the two electrodes were just short-circuited to deposit ZnO. The driving force to promote the ZnO deposition is the dissolution of zinc ions from metallic zinc, which supplies electrons to the TCO glass, reducing nitrate ions. However, Mondal et al. 23 reported that the growth of ZnO stopped at a layer thickness of ϳ0.6 m due to the electrical resistance of ZnO, which becomes higher with increasing thickness.Nonetheless, this system is potentially interesting because one can obtain an external power-free solution process. Furthermore, by not using nitrate ion but using DO to raise the local pH, the following overall reaction is given Zn + 1/2O 2 → ZnO ͓4͔ resulting in a no by-product process that keeps the Zn 2+ concentration constant ͑Fig. 1͒. Therefore, the dev...

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