Gallium oxide as host material for multicolor emitting phosphors

Miyata, Toshihiro; Nakatani, Toshikuni; Minami, Tadatsugu

doi:10.1016/s0022-2313(99)00589-x

Cited by 146 publications

(82 citation statements)

References 6 publications

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“…Furthermore, the wide band gap of ␤-Ga 2 O 3 makes this TCO a suitable host for phosphor applications [11][12][13][14][15][16][17][18][19][20][21][22]. As an example, high luminance was obtained in thin-film electroluminescent displays when gallium oxide is activated with europium ions [12].…”

Section: Introductionmentioning

confidence: 99%

“…As an example, high luminance was obtained in thin-film electroluminescent displays when gallium oxide is activated with europium ions [12]. However, due to poor crystallization of the gallium oxide films [13][14][15], the rare earth ion emission lines are very broad and little is known about the mechanisms behind the intraionic Eu 3+ luminescence in the crystalline Ga 2 O 3 environment.…”

Section: Introductionmentioning

confidence: 99%

“…As for the thin films [13][14][15], large full width at half maximum of the main 5 D 0,1 → 7 F J transitions of the Eu 3+ ions in the nanopowders [18,20] for the emitting ions in crystalline environments, from where the identification of the number of emitting Eu centres and site symmetry could be explored via the Stark level splitting due to the crystal field effect. Although the Eu 3+ emission has been reported for thin films and nanopowders [11][12][13][14][15][16][17][18][19][20][21][22], information on the rare earth ion spectroscopic properties in bulk ␤-Ga 2 O 3 remains scarce and constitutes an important issue to clarify the ion properties inside this TCO material. In the present work, undoped and Eu doped ␤-Ga 2 O 3 fibres were grown by laser floating zone (LFZ).…”

Section: Introductionmentioning

confidence: 99%

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Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres

Santos

Rodrigues

Fernandes

et al. 2012

Applied Surface Science

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres

Santos

Rodrigues

Fernandes

et al. 2012

Applied Surface Science

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“…3 In the case of europium doped gallium oxide, the radiative lifetimes can be quite long ͑1.4 ms͒, 4 indicating it may be a viable gain medium for optically pumped lasers.…”

Section: Introductionmentioning

confidence: 99%

Optimal composition of europium gallium oxide thin films for device applications

Wellenius

Smith

LeBoeuf

et al. 2010

Journal of Applied Physics

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Europium gallium oxide ͑Eu x Ga 1-x ͒ 2 O 3 thin films were deposited on sapphire substrates by pulsed laser deposition with varying Eu content from x = 2.4 to 20 mol %. The optical and physical effects of high europium concentration on these thin films were studied using photoluminescence ͑PL͒ spectroscopy, x-ray diffraction ͑XRD͒, and Rutherford backscattering spectrometry. PL spectra demonstrate that emission due to the 5 D 0 to 7 F J transitions in Eu 3+ grows linearly with Eu content up to 10 mol %. Time-resolved PL indicates decay parameters remain similar for films with up to 10 mol % Eu. At 20 mol %, however, PL intensity decreases substantially and PL decay accelerates, indicative of parasitic energy transfer processes. XRD shows films to be polycrystalline and beta-phase for low Eu compositions. Increasing Eu content beyond 5 mol % does not continue to modify the film structure and thus, changes in PL spectra and decay cannot be attributed to structural changes in the host. These data indicate the optimal doping for optoelectronic devices based on ͑Eu x Ga 1-x ͒ 2 O 3 thin films is between 5 and 10 mol %.

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“…In particular, high-power electronics and controllable doping are expected to allow high luminescence yield to be achieved by electroluminescence in Ga 2 O 3 , which is the process currently used in many luminescent micro-and nanodevices. Electroluminescence is reported for Ga 2 O 3 [30][31][32]. This high luminescence power will facilitate certain features, such as reaching population inversion.…”

Section: Introductionmentioning

confidence: 88%

Modal Analysis of β−Ga2O3:Cr Widely Tunable Luminescent Optical Microcavities

et al. 2018

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Optical microcavities are key elements in many photonic devices, and those based on distributed Bragg reflectors (DBRs) enhance dramatically the end reflectivity, allowing for higher quality factors and finesse values. Besides, they allow for wide wavelength tunability, needed for nano-and microscale light sources to be used as photonic building blocks in the micro-and nanoscale. Understanding the complete behavior of light within the cavity is essential to obtaining an optimized design of properties and optical tunability. In this work, focused ion-beam fabrication of high refractive-index contrast DBR-based optical cavities within Ga 2 O 3 ∶Cr microwires grown and doped by the vapor-solid mechanism is reported. Room-temperature microphotoluminescence spectra show strong modulations from about 650 nm up to beyond 800 nm due to the microcavity resonance modes. Selectivity of the peak wavelength is achieved for two different cavities, demonstrating the tunability of this kind of optical system. Analysis of the confined modes is carried out by an analytical approximation and by finite-difference-time-domain simulations. A good agreement is obtained between the reflectivity values of the DBRs calculated from the experimental resonance spectra, and those obtained by finite-difference-time-domain simulations. Experimental reflectivities up to 70% are observed in the studied wavelength range and cavities, and simulations demonstrate that reflectivities up to about 90% could be reached. Therefore, Ga 2 O 3 ∶Cr high-reflectivity optical microcavities are shown as good candidates for single-material-based, widely tunable light emitters for micro-and nanodevices.

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Gallium oxide as host material for multicolor emitting phosphors

Cited by 146 publications

References 6 publications

Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres

Optical properties of LFZ grown β-Ga2O3:Eu3+ fibres

Optimal composition of europium gallium oxide thin films for device applications

Modal Analysis of β−Ga2O3:Cr Widely Tunable Luminescent Optical Microcavities

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