Gallium nitride thin films by microwave plasma-assisted ALD

Romo-García, F.; Higuera-Valenzuela, H. J.; Cabrera-Germán, D.; Berman-Mendoza, D.; Ramos-Carrazco, A.; Contreras, O.; García-Gutiérrez, Rafael

doi:10.1364/ome.9.004187

Cited by 6 publications

(10 citation statements)

References 21 publications

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“…The characteristic peaks of E 2 (low), E 2 (low), and A 1 (LO) belonging to GaN can be detected through a strategy of prolonging the collection time (Figure 4g), implying the bond formation of Ga−N. 27 The characteristic peaks of Ga 2p 1/2 , Ga 2p 3/2 , and Ga 3d centered at 1144.8, 1117.9, and 19.7 eV match well with the standard XPS peaks of GaN, 28 revealing again the successful substitution of the N element to the O element (Figure 4h,i). In Figure 4i, the fitting spectra of N 1s show the obvious contribution of the Ga−N bond (397.5 eV), overlapped with the Auger electron signal originating from Ga LMM emission (394.2 and 396.1 eV).…”

Section: Resultsmentioning

confidence: 85%

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Zhang

Yang

et al. 2021

Chem. Mater.

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Two-dimensional (2D) nanostructures are mainly confined to being obtained from intrinsically layered crystals via an exfoliation approach or epitaxial growth method, thereby greatly limiting the choice of 2D crystals available for high-performance optoelectronic devices. Here, we introduce an efficient PDMS printing strategy to simultaneously realize the controllable preparation and subsequent transfer of a large-area non-layered 2D Ga2O3 amorphous layer on the basis of ultrathin oxide skin of liquid Ga. More importantly, a template-confined reaction of the 2D Ga2O3 amorphous layer is further proposed to achieve other 2D Ga-group crystals including 2D GaN, GaS, and GaP thin layers. The corresponding crystallization and transformation process under the 2D geometrical space is investigated and demonstrated to be polycrystalline nucleation and growth, which still follows the traditional thermodynamic nucleation rule of critical radius. Furthermore, 2D Ga-group semiconductors could easily stack with themselves or other layered 2D crystals such as MoS2 to construct diverse van der Waals heterostructures for the fabrication of high-performance and multifunctional electronics. We believe that the unique and simple synthetic strategy proposed in this work will promote the preparation and transfer of diverse non-layered 2D crystals for the discovery of new phenomena and functional nanodevices.

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Section: Resultsmentioning

confidence: 85%

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Zhang

Yang

et al. 2021

Chem. Mater.

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“…Moreover, the fitting procedure features several loss peaks due to the inelastic scattering of photoelectrons when they migrate through the 2D flakes . In Figure k, the photoemission spectrum of the N 1s region shows the contribution from the Ga–N (395.86 eV) bond, overlapped with an Auger electron signal originating from the Ga LMM emission …”

Section: Resultsmentioning

confidence: 96%

“…Moreover, the fitting procedure features several loss peaks due to the inelastic scattering of photoelectrons when they migrate through the 2D flakes. 41 In Figure 2k, the photoemission spectrum of the N 1s region shows the contribution from the Ga−N (395.86 eV) bond, overlapped with an Auger electron signal originating from the Ga LMM emission. 41 The GaN flakes with an intact microstructure and a large lateral size allow us to directly prepare electrodes on both ends and measure their photoelectric performance.…”

Section: Resultsmentioning

confidence: 98%

Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Zhang

et al. 2020

ACS Appl. Mater. Interfaces

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Molybdenum disulfide (MoS2) as a typical two-dimensional (2D) transition-metal dichalcogenide exhibits great potential applications for the next-generation nanoelectronics such as photodetectors. However, most MoS2-based photodetectors hold obvious disadvantages including a narrow spectral response in the visible region, poor photoresponsivity, and slow response speed. Here, for the first time, we report the design of a two-dimensional MoS2/GaN van der Waals (vdWs) heterostructure photodetector consisting of few-layer p-type MoS2 and very thin n-type GaN flakes. Thanks to the good crystal quality of the 2D-GaN flake and the built-in electric field in the interface depletion region of the MoS2/GaN p–n junction, photogenerated carriers can be rapidly separated and more excitons are collected by electrodes toward the high photoresponsivity of 328 A/W and a fast response time of 400 ms under the illumination of 532 nm light, which is seven times faster than pristine MoS2 flake. Additionally, the response spectrum of the photodetector is also broadened to the UV region with a high photoresponsivity of 27.1 A/W and a fast response time of 300 ms after integrating with the 2D-GaN flake, exhibiting an advantageous synergetic effect. These excellent performances render MoS2/GaN vdWs heterostructure photodetectors as promising and competitive candidates for next-generation optoelectronic devices.

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“…8,9 Indeed, several researches have been reported recently on the multi-layered structure which comprised of alternating layer of different inorganic materials with individual layer thickness in nanometer-scale. [10][11][12][13] Furthermore, ultra gas-proof polymer hybrid thin layer with WVRT < 10 À7 g per m 2 per day can be achieved by lling the free volume of the polymer with Al 2 O 3 via gas-phase inltration using ALD method. 14 In order to improve the critical weaknesses of inorganic materials such as cracking and pinhole defects, organic layer can be induced using molecular layer deposition (MLD), which is related to similar self-limiting ALD mechanism.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature atomic layer deposition of Al₂O₃/alucone nanolaminates for OLED encapsulation

et al. 2019

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Gallium nitride thin films by microwave plasma-assisted ALD

Cited by 6 publications

References 21 publications

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Low-temperature atomic layer deposition of Al₂O₃/alucone nanolaminates for OLED encapsulation

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Gallium nitride thin films by microwave plasma-assisted ALD

Cited by 6 publications

References 21 publications

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Template Approach to Large-Area Non-layered Ga-Group Two-Dimensional Crystals from Printed Skin of Liquid Gallium

Design and Integration of a Layered MoS2/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Low-temperature atomic layer deposition of Al2O3/alucone nanolaminates for OLED encapsulation

Contact Info

Product

Resources

About

Design and Integration of a Layered MoS₂/GaN van der Waals Heterostructure for Wide Spectral Detection and Enhanced Photoresponse

Low-temperature atomic layer deposition of Al₂O₃/alucone nanolaminates for OLED encapsulation