Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching

Yu, C. C.; Chu, C. Y. Cyrus; Tsai, Jang-Zern; Huang, H. W.; Hsueh, Ting-Jen; Lin, Chia−Feng; Wang, Shing-Chung

doi:10.1143/jjap.41.l910

Cited by 68 publications

(24 citation statements)

References 19 publications

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“…Both in-plane and vertical strain tensors contribute to the polarization field and can be calculated by Eqn. (2). Based on the calculated strain shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

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Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar

Chiu

et al. 2008

SPIE Proceedings

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We have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (µ-PL) from the embedded GaN/InGaN multi-quantum wells reveals a blue shift of 68.3 meV in energy. In order to explain the spectrum shift, we have developed a valence force field model to study the strain relaxation mechanism in a single GaN-based nanopillar structure. The strain distribution and strain induced polarization effect inside the multiple quantum wells is added to our self-consistent Poisson, drift-diffusion, and Schrodinger solver to study the spectrum shift of µ-PL.Keywords: GaN, InGaN, nanopillar, nanorod, strain relaxation, valence force field model INTRODUTIONThe III-nitrides have become very important materials for applications in optoelectronic 1-5 and high power electronics.6, 7 The III-nitrides are direct bandgap materials which can directly emit light easily. The bandgap of nitride alloys is from 6.2eV (AlN) to 0.7eV(InN) which covers from the UV light to the infrared. These properties make it promising for many applications. The III-nitrides have now been widely applied in the quantum well based light emitting diodes(LED) for UV and blue light sources. With the assistant of phosphors, it is possible to convert the UV or blue light into green and red light so that making a white light source for LED becomes feasible. However, it is difficult to directly make a green or a red quantum well LEDs with InGaN based materials. As we know, there is a large lattice mismatch ∼ 10% between InN and GaN. This large lattice mismatch leads to a strong piezoelectric polarization field inside the quantum wells for the normally used c-axis growth. As a result, the strong quantum confined Stark effect (QCSE) is observed in the quantum well structures. The crystal quality also worsens due to stronger strain as we push the emission to longer wavelengths by increasing the indium composition.The strain related issues are difficult to be avoided since it always appears in during the epitaxial growth of InGaN with an large area size. However, the development of nanotechnology has enabled the study of the optical properties of the nanostructures. GaN-based nanostructures, such as nanorods, nanocones, or nanopillars, have been fabricated via various methods.8-12 Several characterizations have been made on the properties of these structures. However, few studies have clarified the emission mechanism from one single nanopillar. In our recent work, 13 we have made a GaN-based single nanopillar with a diameter of 300nm using the focused ion beam (FIB) technique. The micro-photoluminescence (µ-PL) from the embedded GaN/InGaN multi-quantum wells (MQWs) reveals a blue shift of 68.3 meV in energy. The full width at half maximal (FWHM) is also broadened due to the distribution of strain relaxation in the nanopillar.In this paper, we have developed a valence force field model to to explain the µ-PL spectrum in detail and study the strain relaxation mechanism in a single GaN-based n...

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“…Both in-plane and vertical strain tensors contribute to the polarization field and can be calculated by Eqn. (2). Based on the calculated strain shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…The III-nitrides have become very important materials for applications in optoelectronic [1][2][3][4][5] and high power electronics. 6,7 The III-nitrides are direct bandgap materials which can directly emit light easily.…”

Section: Introdutionmentioning

confidence: 99%

Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar

Chiu

et al. 2008

SPIE Proceedings

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“…Nitrides semiconductors, especially the gallium nitride (GaN) based light emitting diode (LED) with an InGaN/AlGaN double heterostructure, are among the most promising optoelectronic devices to be developed in recent years [1][2][3]. With wide bandgap of GaN, thus will emit light from close to the UV range to blue, it can be used in various lighting devices with colour converting material [4].…”

Section: Introductionmentioning

confidence: 99%

“…Yu et al [3] experimentally and theoretically showed that EBL with thick InGaN layer have improved hole injection efficiency and increasing emission properties.…”

Section: Introductionmentioning

confidence: 99%

Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED

et al. 2017

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Abstract. This work is dedicated to the study of InGaN based LED on the thickness variation effect. The operating voltage, total emission rate, efficiency droop and spontaneous recombination rate was improved by increasing the thickness of InGaN layer of InGaN/AlGaN electron blocking layer (EBL). Based on optical and electrical results, the thicker InGaN layer could have lower operating voltage and higher total emission rate. LED with 5nm thick InGaN layer also could prevent electron leakage into p-region and improve hole injection efficiency. As a result it decreases 60% of efficiency droops and reduces the trap assisted recombination in InGaN/AlGaN active light emitting region. This indicates that InGaN layer may decrease the non-radiative recombination.

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“…For a more enlarged emission area, highly ordered nanostructure arrays are of importance for mask templates in wafer scales. For GaN-based nanoscale structures, so far, the GaN nanorods have been produced by various fabrication methods, such as growth of InGaN/GaN multiple quantum nanocolumns/nanorods on Si substrate by radiofrequency (RF) plasma-assisted molecular-beam epitaxy [12] or growth of single-crystal GaN nanorods by hybrid vapor-phase epitaxy [13], synthesis using carbon nanotubes as templates [14], inductively coupled plasma-reactive ion etching (ICP-RIE) without masks [15] or via e-beam patterned [16] nanorods, each with a relatively complicated process. To simplify the patterning process, it is possible to produce self-assembled nickel (Ni) nano-cluster by choosing the correct Ni layer thickness, annealing time and annealing temperature on top of the LED surface.…”

Section: Introductionmentioning

confidence: 99%

Fabrication of Nanorod Light Emitting Diode by Ni Nano-cluster and Enhanced Extraction Efficiency

Mustary¹,

Лысак²

2014

IOSRJEEE

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Gallium Nitride Nanorods Fabricated by Inductively Coupled Plasma Reactive Ion Etching

Cited by 68 publications

References 19 publications

Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar

Analysis of strain relaxation and emission spectrum of a free-standing GaN-based nanopillar

Effect of InGaN thickness on assisted trap recombination and behaviour of InGaN/AlGaN double heterostructure LED

Fabrication of Nanorod Light Emitting Diode by Ni Nano-cluster and Enhanced Extraction Efficiency

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