Gallium Nitride –Based Photodiode: A review

Jabbar, Haneen D.; Fakhri, Makram A.; AbdulRazzaq, Mohammed Jalal

doi:10.1016/j.matpr.2020.12.729

Cited by 36 publications

(21 citation statements)

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“…As Ga-based LMs featuring amorphous surface oxide do not possess inherent photoluminescent properties, the other approach for optical sensing by LMs is based on exploitation of Ga-based LMs for the construction of luminescent coatings. In this context, gallium nitride (GaN) is one of the most popular derivatives of Ga with remarkable photoluminescence properties arising from its wide direct band gap (3.4 V) and high electron mobility . In a study by Cai et al, GaN domains were formed on micronized EGaIn particles through a facile nitridation process feasible at room temperature in the presence of nitrogen precursors.…”

Section: Lm-based Chemical Sensorsmentioning

confidence: 99%

Emerging Role of Liquid Metals in Sensing

Baharfar

Kalantar‐zadeh

2022

ACS Sens.

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Low melting point metals and alloys are the group of materials that combine metallic and liquid properties, simultaneously. The fascinating characteristics of liquid metals (LMs) including softness and high electrical and thermal conductivity, as well as their unique interfacial chemistry, have started to dominate various research disciplines. Utilization of LMs as responsive interfaces, enabling sensing in a flexible and versatile manner, is one of the most promising traits demonstrated for LMs. In the context of LMs-enabled sensors, gallium (Ga) and its alloys have emerged as multipurpose functional materials with many compelling physical and chemical properties. Responsiveness to different stimuli and easy-to-functionalize interfaces of Ga-based LMs make them ideal candidates for a variety of sensing applications. However, despite the vast capabilities of Ga-based LMs in sensing, applications of these materials for developing different sensors have not been fully explored. In the present review, we provide a comprehensive overview regarding the applications of Ga-based LMs in a wide range of sensing approaches that cover different physical and chemical sensors. The unique features of Ga-based LMs, which make them promising materials for sensing, are discussed in subsections followed by relevant case studies. Finally, challenges as well as the prospected future and developing motifs are highlighted for each type of LM-based sensors.

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Section: Lm-based Chemical Sensorsmentioning

confidence: 99%

Emerging Role of Liquid Metals in Sensing

Baharfar

Kalantar‐zadeh

2022

ACS Sens.

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“…Gallium nitride (GaN) is one of the III-nitride semiconductor materials with different forms (powder, films, and nanoparticles) [4,5]. GaN has high electron mobility, high carrier saturation velocity, high thermal conductivity, a wide band gap of 3.4 eV, and a high optical absorption coefficient [6][7][8][9]. GaN-based optoelectronic devices include light-emitting diodes (LEDs), photodiodes, ultraviolet detectors, and high-power and high-frequency optoelectronic devices [10,11].…”

Section: Introductionmentioning

confidence: 99%

Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi

Jabbar¹,

Fakhri²,

Razzaq³

et al. 2023

Journal of Renewable Materials

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Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi substrates were fabricated using a photoelectrochemical etching method assisted by laser at different etching times for 2.5-15 min at 2.5 min intervals. X-ray diffraction, room-temperature photoluminescence, atomic force microscopy and field emission scanning electron microscopy images, and electrical characteristics in the prepared GaN on the Psi film were investigated. The optimum Psi substrate was obtained under the following conditions: 10 min, 10 mA/cm 2 , and 24% hydrofluoric acid. The substrate exhibited two highly cubic crystalline structures at (200) and (400) orientations and yellow visible band photoluminescence, and homogeneous pores formed over the entire surface. The pores had steep oval shapes and were accompanied by small dark pores that appeared topographically and morphologically. The GaN/Psi film fabricated through PLD exhibited a high and hexagonal crystallographic texture in the (002) plane. Spectroscopic properties results revealed that the photoluminescence emission of the deposited nano-GaN films was in the ultraviolet band (374 nm) related to GaN material and in the near-infrared band (730 nm) related to the Psi substrate. The topographical and morphological results of the GaN films confirmed that the deposited film contained spherical grains with an average diameter of 51.8 nm and surface roughness of 4.8 nm. The GaN/Psi surface showed a cauliflower-like morphology, and the built-in voltage decreased from 3.4 to 2.7 eV after deposition. The fabricated GaN/Psi film exhibited good electrical characteristics.

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“…Nowadays, Gallium Nitride (GaN) is one of the III-V nitride semiconductor materials with a hexagonal wurtzite structure that has unique optical properties with a wide tunable direct band-gap of 3.4 eV [1][2][3]. This makes it possible to make optoelectronic devices that work with UV and visible light, like LEDs, LDs, photodiodes, and UV detectors [4][5][6].…”

Section: Introductionmentioning

confidence: 99%